APT60GT60JRD
IGBT Modules FG
在庫:8,666
- 90日間のアフター保証
- 365日の品質保証
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部品番号 : APT60GT60JRD
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パッケージ/ケース : SOT-227-4
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Brand : MICROCHIP
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Components Classification : IGBT Modules
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日付シート : APT60GT60JRD データシート (PDF)
概要 APT60GT60JRD
The APT60GT60JRD power transistor module sets the standard for performance and reliability in the field of N-channel MOSFET modules. Its 600V voltage rating and 75A current rating make it a powerhouse for high-power applications, while its compact and durable design ensures long-term dependability. With a low on-state resistance and fast switching speed, this module delivers efficient power handling with minimal energy loss, making it a top choice for motor control, power supplies, and inverters. Its built-in protection features such as overcurrent and overtemperature protection further enhance its safety and reliability, making it an ideal solution for demanding industrial and automotive applications
主な特長
- Precision engineering for precise results
- State-of-the-art manufacturing process
- Made to last with minimal maintenance
応用
- Smart energy solutions
- Reliable power systems
- Clean energy technology
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Category | IGBT Modules | Product | IGBT Silicon Modules |
Configuration | Single | Collector- Emitter Voltage VCEO Max | 600 V |
Collector-Emitter Saturation Voltage | 2 V | Continuous Collector Current at 25 C | 93 A |
Gate-Emitter Leakage Current | 100 nA | Pd - Power Dissipation | 378 W |
Package / Case | SOT-227-4 | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Brand | Microchip Technology |
Maximum Gate Emitter Voltage | 20 V | Mounting Style | Screw Mount |
Product Type | IGBT Modules | Factory Pack Quantity | 1 |
Subcategory | IGBTs | Technology | Si |
Unit Weight | 2 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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