AUIRF1010EZ
HEXFET technology utilized in this 60V N-channel automotive MOSFET, boasting a low on-state resistance of 8.5mOhms
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部品番号 : AUIRF1010EZ
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パッケージ/ケース : TO-220-3
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Brand : International Rectifier
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Components Classification : Single FETs, MOSFETs
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日付シート : AUIRF1010EZ データシート (PDF)
概要 AUIRF1010EZ
Introducing the AUIRF1010EZ power MOSFET from Infineon Technologies, designed to meet the stringent requirements of high-performance automotive applications. With a 100V drain-source voltage rating and a continuous drain current of 68A, this MOSFET is well-suited for a wide range of automotive power needs. Its robust design ensures high efficiency and reliability in the challenging automotive environment, making it suitable for use in power steering systems, engine control units, and electric vehicle powertrains. Housed in a TO-220 package, the AUIRF1010EZ offers exceptional thermal performance and easy mounting to a heatsink for improved heat dissipation. Furthermore, its low on-resistance and gate charge contribute to reduced conduction and switching losses, ultimately improving the overall system efficiency
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Series | HEXFET® | Package | Bulk |
| Product Status | Active | FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) | Rds On (Max) @ Id, Vgs | 8.5mOhm @ 51A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 86 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2810 pF @ 25 V | Power Dissipation (Max) | 140W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB | Package / Case | TO-220-3 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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