AUIRF9Z34N
AUIRF9Z34N is a P-Channel Automotive MOSFET with a voltage range of 20V to 150V
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $0.791 | $0.79 |
| 200 | $0.307 | $61.40 |
| 500 | $0.296 | $148.00 |
| 1000 | $0.292 | $292.00 |
在庫：5,277
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
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部品番号 : AUIRF9Z34N
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パッケージ/ケース : TO-220-3
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Brand : International Rectifier
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Components Classification : Single FETs, MOSFETs
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日付シート : AUIRF9Z34N データシート (PDF)
概要 AUIRF9Z34N
Infineon Technologies' AUIRF9Z34N power MOSFET is a rugged and reliable solution for high-power automotive applications. With its impressive voltage rating, continuous drain current, and low on-resistance, this MOSFET is well-equipped to handle the challenges of automotive systems. Not only does it deliver high performance, but it also boasts a wide operating temperature range and the ability to withstand high surge currents, ensuring its durability and reliability in harsh automotive environments
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Series | HEXFET® | Package | Bulk |
| Product Status | Active | FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 55 V |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 10A, 10V | Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V | Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 620 pF @ 25 V | Power Dissipation (Max) | 68W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | Grade | Automotive |
| Qualification | AEC-Q101 | Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB | Package / Case | TO-220-3 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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