AUIRFZ24NS
Automotive N-channel silicon transistor with a voltage rating of 55V and current rating of 17A
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $1.262 | $1.26 |
| 10 | $1.080 | $10.80 |
| 50 | $0.980 | $49.00 |
| 100 | $0.867 | $86.70 |
| 500 | $0.818 | $409.00 |
| 1000 | $0.794 | $794.00 |
在庫：5,829
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : AUIRFZ24NS
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パッケージ/ケース : TO-252-3
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ブランド : Infineon Technologies
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コンポーネントの分類 : Single FETs, MOSFETs
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日付シート : AUIRFZ24NS データシート (PDF)
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Series : AUIRFZ24NS
概要 AUIRFZ24NS
- Featuring a low on-resistance of 0.07ohm, the AUIRFZ24NS ensures minimal power loss and heat generation, making it an ideal choice for high-power applications in automotive electronics. Its N-channel design and silicon construction provide excellent switching performance and reliability in demanding operating conditions
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Series | HEXFET® | Package | Tube |
| Product Status | Obsolete | FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 55 V |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 10A, 10V | Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V | Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 370 pF @ 25 V | Power Dissipation (Max) | 3.8W (Ta), 45W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | Mounting Type | Surface Mount |
| Supplier Device Package | TO-252AA (DPAK) | Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Base Product Number | AUIRFZ24 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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