|
MCR12DCMT4G
|
DPAK-packaged SCR with 600 Volts, 12 Amperes (RMS), 100 Amperes Peak Current, 3 Pins (2+Tab), supplied in Tape and Reel |
Littelfuse Inc. |
6,125 |
|
|
NTD2955
|
This silicon-based NTD2955 MOSFET is housed in a DPAK-3 case (369C-01) and is designed for power applications |
onsemi |
7,630 |
|
|
STD18N55M5
|
Trans MOSFET N-CH Si 550V 16A 3-Pin(2+Tab) DPAK T/R |
STMicroelectronics |
9,650 |
|
|
TA48M05F(T6L1,SNQ)
|
LDO Voltage Regulators with 0.5A output in a new PW-Mold design |
Toshiba Semiconductor and Storage |
6,342 |
|
|
ZLDO1117K33TC
|
The ZLDO1117K33TC low dropout regulator is housed in a TO252 package and can supply a maximum current of 1A at an output voltage of 3.3V |
Diodes Incorporated |
7,958 |
|
|
BA178M05FP-E2
|
Fixed regulator |
Rohm Semiconductor |
6,151 |
|
|
BTS142D
|
BTS142D SMD 42V TO252-3 LSS 28mOhm |
Infineon |
5,248 |
|
|
LM1117DT-3.3
|
Linear voltage regulator LM1117DT-3.3 |
Texas Instruments |
3,707 |
|
|
FQD20N06TM
|
Trans MOSFET N-CH 60V 16.8A 3-Pin(2+Tab) DPAK T/R |
onsemi |
8,373 |
|
|
LM78M05CDTX/NOPB
|
Compact design simplifies board-level integration |
TI |
3,921 |
|
|
MC78M05BDTG
|
Standard Regulator Pos 5V 0.5A 3-Pin(2+Tab) DPAK Tube |
onsemi |
6,690 |
|
|
NCV1117DT50RKG
|
LDO Regulator Pos 5V 1A Automotive AEC-Q100 3-Pin(2+Tab) DPAK T/R |
onsemi |
6,133 |
|
|
FDD86252
|
Trans MOSFET N-CH Si 150V 5A 3-Pin(2+Tab) DPAK T/R |
onsemi |
5,475 |
|
|
IRLR8726PBF
|
MOSFET 30V 1 N-CH HEXFET |
Infineon |
6,981 |
|
|
IPD060N03LG
|
IPD060N03LG is a N-channel power MOSFET with a maximum voltage rating of 30V and a current rating of 50A |
Infineon Technologies |
6,753 |
|
|
BA033FP-E2
|
Fixed Positive LDO Regulator with 3.3V Output Voltage |
Rohm Semiconductor |
9,383 |
|
|
IPD50N04S4-08
|
40V 50A High Current MOSFET |
INFINEON |
7,536 |
|
|
IPD031N06L3G
|
Power MOSFET with 60V voltage capacity and 100A current handling |
Infineon Technologies |
7,520 |
|
|
IPD50R280CE
|
Consumer MOSFET |
INFINEON |
3,880 |
|
|
IRFR7540TRPBF
|
Power Field-Effect Transistor |
Infineon Technologies |
6,659 |
|
|
IRFR15N20DTRPBF
|
Transistor MOSFET N-Channel in DPAK Package with 200V Voltage Rating and 17A Current Rating |
INFINEON |
7,676 |
|
|
SPD02N80C3
|
Infineon SPD02N80C3 N-channel MOSFET Transistor, 2 A, 800 V, 3-Pin TO-252 |
INFINEON |
5,111 |
|
|
FQD30N06L
|
Power Field-Effect Transistor with 24A I(D) and 60V |
Onsemi |
7,465 |
|
|
MAC4DSNT4G
|
This component is suitable for switching and regulating electrical currents |
Littelfuse Inc. |
7,706 |
|
|
MBRD10200CT-13
|
Schottky rectifier diode with 1 phase and 2 elements, featuring a maximum forward current of 5A and a voltage rating of 200V |
Diodes Incorporated |
8,933 |
|
|
MBRD5H100T4G
|
Phase Schottky Rectifier Diode Silicon 5A Element VRRM 100V |
Onsemi |
5,169 |
|
|
MC78M09CDTRKG
|
Standard Regulator Pos 9V 0.5A 3-Pin(2+Tab) DPAK T/R |
onsemi |
8,706 |
|
|
MCR8DCMT4G
|
MCR8DCMT4G: 600V, 8A (RMS) Silicon Controlled Rectifier with 80A Surge Current, DPAK Package (3-Pin with 2+Tab) provided in Tape and Reel packaging |
Littelfuse Inc. |
6,306 |
|
|
MJD31CAJ
|
NPN Bipolar Junction Transistor with Automotive Grade Quality |
Nexperia USA Inc. |
6,766 |
|
|
MTD3055VL
|
Trans MOSFET N-CH 60V 12A 3-Pin(2+Tab) DPAK T/R |
onsemi |
9,609 |
|
|
NGD8205ANT4G
|
The NGD8205ANT4G is a Transistor IGBT Chip designed in an N-Channel configuration |
onsemi |
8,269 |
|
|
NJM317DL1-TE1
|
Linear regulators for adjustable voltage applications |
Nisshinbo Micro Devices Inc. |
7,768 |
|
|
NP50P06SDG-E1-AY
|
Established in 1988, specializing in electronic distribution in France |
Renesas Electronics Corporation |
8,886 |
|
|
NTD70N03R
|
NTD70N03R is a power MOSFET with an N-channel design, featuring a 32A current rating, 25V voltage capability, and a low resistance of 0.013 ohms |
Onsemi |
8,062 |
|
|
RB075B40STL
|
Schottky Rectifier Diode, comprising one element, designed for 5 Amperes current and featuring a 40V reverse voltage rating |
Rohm Semiconductor |
8,827 |
|
|
RB085BM-40TL
|
Common cathode diode with a maximum reverse voltage of 45V |
Rohm Semiconductor |
8,089 |
|
|
RB095B-90TL
|
High-performance rectifier diode utilizing Schottky technology, designed for 6A current and 90V reverse voltage |
Rohm Semiconductor |
8,508 |
|
|
RB095BM-40TL
|
Diode (Rectifier FRD) 45V-VRM 40V-VR 6A-IO 50A-IFSM Dual C Common |
Rohm Semiconductor |
7,461 |
|
|
RD3H160SPTL1
|
Reel-packaged P-channel MOSFET with a 45V voltage rating and 16A current capacity, housed in a DPAK package |
Rohm Semiconductor |
8,914 |
|
|
RD3P200SNTL1
|
N-Channel 100V 20A 20W Surface Mount Power MOSFET - TO-252: RD3P200SNTL1 |
Rohm Semiconductor |
9,068 |
|
|
RF301B2STL
|
3-Pin SC-63 RF301B2STL ROHM 200V 3A Diode |
Rohm Semiconductor |
5,267 |
|
|
RF305B6STL
|
A Rectifier Diode equipped with one element, supporting currents up to 3A and possessing a voltage rating of 600V V(RRM) |
Rohm Semiconductor |
9,723 |
|
|
RF505BM6S
|
Super Fast Recovery Diode |
ROHM |
4,132 |
|
|
RSD131P10TL
|
With a designation of RSD131P10TL |
Rohm Semiconductor |
7,048 |
|
|
RSD150N06TL
|
The RSD150N06TL is a silicon-based Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) with a maximum drain current of 15A |
Rohm Semiconductor |
7,284 |
|
|
RSD100N10TL
|
ROHM RSD100N10TL N-channel MOSFET 10 A 100 V |
Rohm Semiconductor |
8,957 |
|
|
RSD201N10TL
|
The transistor has 1 element and belongs to the N-Channel, Silicon, Metal-oxide Semiconductor FET category |
Rohm Semiconductor |
8,375 |
|
|
RSD221N06TL
|
Small Signal Field-Effect Transistor with 22A Drain Current and 60V Voltage Rating |
Rohm Semiconductor |
6,209 |
|
|
SFT1446-TL-H
|
SFT1446: An efficient N-channel MOSFET engineered to facilitate seamless switching in a multitude of applications |
Sanyo |
7,484 |
|
|
SGD02N120
|
Integrated Circuit - N-channel IGBT Component with 1200V Voltage Rating, Capable of Carrying 6 |
Infineon |
7,409 |
|
