BCM857BS-7-F
PNP Bipolar Junction Transistor for General Purpose Applications, with a Voltage Rating of 45 Volts and a Current Rating of 0
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 10 | $0.041 | $0.41 |
| 100 | $0.036 | $3.60 |
| 300 | $0.033 | $9.90 |
| 3000 | $0.031 | $93.00 |
| 6000 | $0.029 | $174.00 |
| 9000 | $0.028 | $252.00 |
在庫：7,773
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : BCM857BS-7-F
-
パッケージ/ケース : SOT-363-6
-
Brand : Diodes Incorporated
-
Components Classification : Bipolar Transistor Arrays
-
日付シート : BCM857BS-7-F データシート (PDF)
-
Series : BCM857
概要 BCM857BS-7-F
Bipolar (BJT) Transistor Array 2 PNP (Dual) 45V 100mA 100MHz 200mW Surface Mount SOT-363
主な特長
HIGH RELIABILITY応用
- Current mirror
- Differential amplifier
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Status | Active | Transistor Type | 2 PNP (Dual) |
| Current - Collector (Ic) (Max) | 100mA | Voltage - Collector Emitter Breakdown (Max) | 45V |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 100mA | Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 220 @ 2mA, 5V | Power - Max | 200mW |
| Frequency - Transition | 100MHz | Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Package / Case | SOT-363-6 |
| Supplier Device Package | SOT-363 | Base Product Number | BCM857 |
| Manufacturer | Diodes Incorporated | Product Category | Bipolar Transistors - BJT |
| RoHS | Details | Mounting Style | SMD/SMT |
| Transistor Polarity | PNP | Configuration | Dual |
| Collector- Emitter Voltage VCEO Max | 45 V | Collector- Base Voltage VCBO | 50 V |
| Emitter- Base Voltage VEBO | 5 V | Collector-Emitter Saturation Voltage | 400 mV |
| Maximum DC Collector Current | 100 mA | Pd - Power Dissipation | 200 mW |
| Gain Bandwidth Product fT | 100 MHz | Minimum Operating Temperature | - 65 C |
| Maximum Operating Temperature | + 150 C | Series | BCM857 |
| Brand | Diodes Incorporated | Continuous Collector Current | - 100 mA |
| DC Collector/Base Gain hfe Min | 220 | DC Current Gain hFE Max | 475 |
| Product Type | BJTs - Bipolar Transistors | Factory Pack Quantity | 3000 |
| Subcategory | Transistors | Technology | Si |
| Unit Weight | 0.000212 oz |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
BC847BW,115
Trans GP BJT NPN 45V 0.1A 200mW 3-Pin SC-70 T/R
BCP53T1G
SOT-223 Transistor BCP53T1G, PNP Junction Type with 80V Voltage and 1.5A Current Ratings, Packaged in Tape and Reel
BCW66GLT1G
Trans GP BJT NPN 45V 0.8A 300mW 3-Pin SOT-23 T/R
BCP56-16T1G
A transistor with an NPN configuration capable of handling currents up to 1.0 A and voltages of 80 V
BC857CLT1G
TO-236AB packaged silicon transistor with a single element, suitable for small signal applications
BC856BLT1G
Product BC856BLT1G is a PNP bipolar transistor capable of handling currents up to 100mA and voltages up to 80V
BC847ALT1G
47ALT1G is a 3-Pin SOT-23 packaged Bipolar Transistor with NPN configuration
BC817-40LT1G
NPN Silicon Transistor TO-236 Package
BC817-16LT1G
NPN Bipolar Transistors with 500mA and 50V rating
BC63916-D27Z
NPN Transistor with Medium Power Rating
BC817-16LT3G
BC817-16LT3G NPN Bipolar Junction Transistor
2SC945A-A
SMALL SIGNAL BIPOLAR TRANSTR NPN
SCT2280KEC
ROHM SCT2280KEC N-channel MOSFET Transistor
SI8425DB-T1-E1
Trans MOSFET P-CH 20V 9.3A 4-Pin Micro Foot T/R
IXTK60N50L2
MOSFET with a 60 Amps and 500V rating
2N2609
Precise P-channel JFET for precise control and monitorin
FP20R06KL4
High-performance power electronics module for reliable switching applications up to and
AON7400B
0V 40A Power Transistor
DTC143EUAT106
ROHS compliant SOT-323 (SC-70) package with 50V voltage rating
TPH3212PS
TPH3212PS is a GAN FET featuring a 650V voltage rating and a 27A current capacity in a TO220 package