|
SI1869DH-T1-E3
|
This load switch offers reliable performance and high-level shifting functionality, making it a versatile solution for various electronic systems |
Vishay |
7,545 |
|
|
DMG1016UDW-7
|
Small Signal Field-Effect Transistor |
Diodes Incorporated |
8,605 |
|
|
MGA-62563-BLKG
|
MGA-62563-BLKG RF Amplifier offering 3 stage voltage amplification with 22 dB gain |
Broadcom Limited |
7,890 |
|
|
SI1965DH-T1-GE3
|
SI1965DH-T1-GE3 Dual P-Channel MOSFET, 1.2 A, 12 V, 6-Pin SOT-363 Vishay |
Vishay Siliconix |
5,711 |
|
|
SI1926DL-T1-E3
|
N Channel 60V 370mA 1.4 ohm |
Vishay |
8,276 |
|
|
UM6K31NTN
|
At 10V and 150mW, UM6K31NTN showcases a voltage drop of 2.3V at 1mA, with its N-Channel SOT-363 MOSFETs meeting the ROHS requirements |
Rohm Semiconductor |
5,304 |
|
|
UMH9NTN
|
Dual NPN Digital Transistor with 50 V and 100 mA from UMH9N Series |
Rohm Semiconductor |
7,414 |
|
|
DMN3190LDW-7
|
Green Plastic Package-6 |
Diodes Incorporated |
4,560 |
|
|
BCM857BS-7-F
|
PNP Bipolar Junction Transistor for General Purpose Applications, with a Voltage Rating of 45 Volts and a Current Rating of 0 |
Diodes Incorporated |
7,773 |
|
|
DMC2004DWK-7
|
Trans MOSFET N/P-CH 20V 0.54A/0.43A 6-Pin SOT-363 T/R |
Diodes Incorporated |
7,604 |
|
|
74LVC2G14GW,125
|
Inverter Schmitt Trigger 2-Element CMOS 6-Pin TSSOP T/R |
Nexperia |
8,981 |
|
|
HN1B04FU-GR,LF
|
Transistor for amplifying small signals at low frequencies |
Toshiba |
8,279 |
|
|
DDC123JU-7-F
|
Dual NPN Digital Transistor DDC123JU-7-F by Diodes Inc with 100 mA 50 V Ratio Of 2.2 kΩ, 6-Pin SOT-363 |
Diodes Incorporated |
8,004 |
|
|
UMD2NTR
|
SOT-363 packaged NPN and PNP dual digital transistor with built-in bias resistor |
Rohm Semiconductor |
7,353 |
|
|
PSA-5453+
|
The PSA-5453+ is a versatile RF amplifier IC designed for a wide range of wireless applications." |
Mini-Circuits |
7,499 |
|
|
UMD12NTR
|
Compliance: ROHS certified for environmental standards |
Rohm Semiconductor |
6,776 |
|
|
DZDH0401DW-7
|
Efficient controller for diode operation |
Diodes Incorporated |
6,843 |
|
|
BAV756DW
|
Rectifier Diode Small Signal Switching 90V 0.15A 4ns 6-Pin SOT-363 T/R |
Diodes Incorporated |
6,693 |
|
|
UM6K1NTN
|
Transistor MOSFET Array |
Rohm Semiconductor |
7,624 |
|
|
UMD5NTR
|
NPN+PNP SOT-363 Dual Digital Transistor |
Rohm Semiconductor |
5,269 |
|
|
SI1427EDH-T1-GE3
|
P-Channel MOSFET with a 20V rating and 2A current capacity in a 6-pin SC-70 package, available in tape and reel packaging |
Vishay |
6,210 |
|
|
SI1480DH-T1-GE3
|
Small Signal Field-Effect Transistor |
Vishay |
6,021 |
|
|
BAS21TW-7
|
With its high performance and reliability, BAS21TW-7 is a popular choice for electronic devices requiring efficient signal handling |
Diodes Incorporated |
6,460 |
|
|
DMN63D8LDW-7
|
The DMN63D8LDW-7 package is designed for use in various electronic circuits requiring efficient power management and voltage regulation |
Diodes Incorporated |
8,113 |
|
|
SI1443EDH-T1-GE3
|
High Efficiency Power Semiconductor |
Vishay |
6,802 |
|
|
SDA004-7
|
Diodes Inc SDA004-7 Switching Diode, 500mA 80V, 6-Pin SOT-363 |
Diodes Incorporated |
8,051 |
|
|
DMC3400SDW-7
|
6-Pin SOT-363 Package Transistor MOSFET with 30V Voltage and 0.65A/0.45A Current Dual-Functionality |
Diodes Incorporated |
9,625 |
|
|
RF3024TR7
|
Compact SC70-6 package for space-constrained designs |
Murata |
7,544 |
|
|
MGA-61563-TR1G
|
Suitable for both 3V and 5V systems |
Broadcom Limited |
5,082 |
|
|
MGA-62563-TR1G
|
RF Amplifier with 3 dB Signal Gain and 22 dB Amplification |
Broadcom Limited |
6,023 |
|
|
MGA-68563-TR1G
|
Enhance RF communication with this RF amplifier driver-amplifier" |
Broadcom Limited |
9,187 |
|
|
DMMT3904W
|
High-gain dual transistor for analog applicatio |
DIODE |
6,739 |
|
|
BAV99BRW
|
BAV99BRW is a type of small signal switching diode, featuring a voltage range of 50-350V, a 75V capacity, and a power dissipation of 200mW |
CJ/WINNERJOIN |
8,285 |
|
|
BAS70TW-7-F
|
Featuring three independent Schottky Barrier Diodes (SBD) |
Diodes Incorporated |
7,923 |
|
|
ABA-54563-BLKG
|
23 dB gain RF amplifier suitable for frequencies from DC to 3.4 GHz |
Broadcom Limited |
7,005 |
|
|
ABA-31563-TR1G
|
Amplifier for RF signals ranging from DC to 3.5 GHz with 21.5dB gain |
Broadcom Limited |
6,978 |
|
|
BCR183S
|
Product BCR183S is a line of pre-biased bipolar transistors |
Infineon |
7,860 |
|
|
MGA-61563-BLKG
|
Low Power Amplifier with Wide Band, 100MHz Minimum, 6000MHz Maximum, GAAS |
Broadcom Limited |
5,867 |
|
|
SI1539CDL-T1-GE3
|
30V MOSFET with 0.7A Current and 0.34W Power |
Vishay |
8,379 |
|
|
SMUN5314DW1T1G
|
BRT Complementary Bipolar Digital Transistor |
onsemi |
8,551 |
|
|
SBC847BPDW1T3G
|
Trans GP BJT NPN/PNP 45V 0.1A 380mW Automotive AEC-Q101 6-Pin SC-88 T/R |
onsemi |
9,246 |
|
|
NLAST4599DFT2G
|
Analog Switch Single SPDT 6-Pin SC-88 T/R |
onsemi |
5,386 |
|
|
SBC847BDW1T1G
|
Trans GP BJT NPN 45V 0.1A 380mW Automotive AEC-Q101 6-Pin SC-88 T/R |
onsemi |
6,137 |
|
|
MUN5211DW1T1G
|
MUN5211DW1T1G is a SOT-363 NPN-Pre-Biased Digital Transistor with 2V and 100mA |
onsemi |
6,865 |
|
|
SMUN5111DW1T1G
|
Trans Digital BJT PNP 50V 100mA 385mW Automotive AEC-Q101 6-Pin SC-88 T/R |
onsemi |
8,434 |
|
|
SBC857BDW1T1G
|
Trans GP BJT PNP 45V 0.1A 380mW Automotive AEC-Q101 6-Pin SC-88 T/R |
onsemi |
9,080 |
|
|
NLAS4157DFT2G
|
Analog Switch Single SPDT 6-Pin SC-88 T/R |
onsemi |
8,134 |
|
|
SBC856BDW1T1G
|
Trans GP BJT PNP 65V 0.1A 380mW Automotive AEC-Q101 6-Pin SC-88 T/R |
onsemi |
6,188 |
|
|
UMH9N
|
High-current amplifier for audio applicatio |
ROHM Semiconductor |
8,721 |
|
|
UMD12N
|
The UMD12N transistor is a RoHS certified component in the SOT-363 package |
ROHM Semiconductor |
8,874 |
|
