BCP5616H6327XTSA1
Transistor with NPN polarity, capable of handling up to 80V and 1A of current, SOT223 package with 2W power dissipation
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $0.562 | $0.56 |
200 | $0.218 | $43.60 |
500 | $0.210 | $105.00 |
1000 | $0.207 | $207.00 |
在庫:6,915
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : BCP5616H6327XTSA1
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パッケージ/ケース : TO-261-4
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ブランド : Infineon Technologies
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コンポーネントの分類 : Single Bipolar Transistors
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日付シート : BCP5616H6327XTSA1 データシート (PDF)
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Series : BCP56-16
概要 BCP5616H6327XTSA1
Bipolar (BJT) Transistor NPN 80 V 1 A 100MHz 2 W Surface Mount PG-SOT223-4-10
主な特長
- IC = 1A Continuous Collector Current
- Low Saturation Voltage VCE(sat) <500mV @ 0.5A
- Gain groups 10 and 16
- Epitaxial Planar Die Construction
- Complementary PNP types: BCP51, 52 and 53
- Lead-Free, RoHS Compliant (Note 1)
- Halogen and Antimony Free. “Green” Devices (Note 2)
- Qualified to AEC-Q101 Standards for High Reliability
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Package | Tape & Reel (TR) | Product Status | Last Time Buy |
Transistor Type | NPN | Current - Collector (Ic) (Max) | 1 A |
Voltage - Collector Emitter Breakdown (Max) | 80 V | Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) | DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 2V |
Power - Max | 2 W | Frequency - Transition | 100MHz |
Operating Temperature | 150°C (TJ) | Mounting Type | Surface Mount |
Package / Case | TO-261-4, TO-261AA | Supplier Device Package | PG-SOT223-4-10 |
Base Product Number | BCP56 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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