IXTK40P50P
P-MOSFET transistor with PolarP™ technology
在庫：6,382
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
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部品番号 : IXTK40P50P
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パッケージ/ケース : TO264-3
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ブランド : IXYS
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コンポーネントの分類 : Single FETs, MOSFETs
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日付シート : IXTK40P50P データシート (PDF)
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Series : IXTK40P50
概要 IXTK40P50P
Experience the next level of power management with the IXTK40P50P Polar™ P-Channel MOSFET. Featuring advanced technology that reduces on-state resistance (RDSon) and gate charge (Qg) by 30% and 40% respectively, this MOSFET offers exceptional efficiency and performance. Its dynamic dv/dt and avalanche ratings ensure reliability in challenging conditions, while its ability to be easily paralleled makes it a versatile choice for various applications. Upgrade to the IXTK40P50P MOSFET for optimal power management solutions
主な特長
- Rugged construction
- Durable components
- Elongated lifespan
応用
- Robotics applications
- Switch mode power supplies
- Grid-tied inverters
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Drain-Source Voltage (V) | -500 | Maximum On-Resistance @ 25 ℃ (Ohm) | 0.23 |
| Continuous Drain Current @ 25 ℃ (A) | -40 | Gate Charge (nC) | 205 |
| Input Capacitance, CISS (pF) | 11500 | Thermal resistance [junction-case] (K/W) | 0.14 |
| Configuration | Single | Package Type | TO-264 |
| Typical Reverse Recovery Time (ns) | 477 | Power Dissipation (W) | 890 |
| Sample Request | Yes | Check Stock | Yes |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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