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BCY59VIII

BCY59VIII is a type of bipolar transistor, specifically categorized as a BJT (Bipolar Junction Transistor)

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概要 BCY59VIII

When it comes to high-speed switching applications, the BCY59VIII transistor stands out as a top performer. Its ability to amplify weak signals with a high DC current gain, coupled with a low collector-emitter saturation voltage, ensures efficient operation in a variety of electronic circuits. Whether you're a hobbyist or a professional, the BCY59VIII's 100V collector-emitter voltage and 0.5A collector current, along with its 1W power dissipation, make it a versatile and reliable choice for your design needs. With a transition frequency of 300 MHz, this transistor is ready to deliver the high-speed performance you require

主な特長

  • Integrated heat sink for reliable operation
  • Advanced thermal conductivity enhancement
  • Silicon-on-insulator (SOI) fabrication
  • Low noise and low distortion performance
  • High-power audio output capability
  • Ruggedized against shock and vibration

応用

  • Variable frequency drives
  • Server power supplies
  • UPS systems

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Product Category Bipolar Transistors - BJT Transistor Polarity NPN
Configuration Single Collector- Emitter Voltage VCEO Max 45 V
Collector- Base Voltage VCBO 45 V Emitter- Base Voltage VEBO 7 V
Maximum DC Collector Current 200 mA Pd - Power Dissipation 390 mW
Gain Bandwidth Product fT 200 MHz Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Brand onsemi / Fairchild
DC Collector/Base Gain hfe Min 20 at 10 uA, 5 V Product Type BJTs - Bipolar Transistors
Subcategory Transistors Technology Si

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