BF199
NPN type RF transistor with high current gain and voltage rating, ideal for V operatio
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部品番号 : BF199
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パッケージ/ケース : TO-92-3
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Brand : Nxp
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Components Classification : Bipolar RF Transistors
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日付シート : BF199 データシート (PDF)
概要 BF199
RF Transistor NPN 25V 50mA 1.1GHz 350mW Through Hole TO-92-3
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Category | Bipolar Transistors - BJT | RoHS | Details |
| Mounting Style | Through Hole | Package / Case | TO-92-3 |
| Transistor Polarity | NPN | Configuration | Single |
| Collector- Emitter Voltage VCEO Max | 25 V | Collector- Base Voltage VCBO | 40 V |
| Emitter- Base Voltage VEBO | 4 V | Maximum DC Collector Current | 25 mA |
| Pd - Power Dissipation | 500 mW | Gain Bandwidth Product fT | 550 MHz |
| Minimum Operating Temperature | - 65 C | Maximum Operating Temperature | + 150 C |
| Brand | NXP Semiconductors | DC Collector/Base Gain hfe Min | 38 |
| DC Current Gain hFE Max | 38 at 7 mA, 10 V | Height | 5.2 mm |
| Length | 4.8 mm | Product Type | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 1000 | Subcategory | Transistors |
| Technology | Si | Width | 4.2 mm |
| Part # Aliases | BF199,112 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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