BLF881,112

Meet the BLF881: a cutting-edge RF Power Field-Effect Transistor crafted for professional use in ultra high frequency settings. Boasting Silicon technology and an N-Channel design, this transistor offers superior performance and reliability. Additionally, the BLF881 is ROHS COMPLIANT, signaling its commitment to eco-friendly manufacturing practices. Encased in a durable ceramic package, this transistor is equipped to handle demanding conditions and deliver consistent results. Elevate your projects and amplify your capabilities with the BLF881

主な特長

• 2-Tone performance at 860 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 0.5 A:
• Peak envelope power load power = 140 W
• Power gain = 21 dB
• Drain efficiency = 49 %
• Third order intermodulation distortion = −34 dBc
• DVB performance at 858 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 0.5 A:
• Average output power = 33 W
• Power gain = 21 dB
• Drain efficiency = 34 %
• Shoulder distance = −33 dBc (4.3 MHz from center frequency)
• Integrated ESD protection
• Excellent ruggedness
• High power gain
• High efficiency
• Excellent reliability
• Easy power control
• Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)