BSC070N10LS5ATMA1
This MOSFET has a voltage rating of 100V and is designed for high efficiency applications
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $1.671 | $1.67 |
10 | $1.452 | $14.52 |
30 | $1.315 | $39.45 |
100 | $1.123 | $112.30 |
500 | $1.060 | $530.00 |
1000 | $1.032 | $1,032.00 |
在庫:7,396
- 90日間のアフター保証
- 365日の品質保証
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部品番号 : BSC070N10LS5ATMA1
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パッケージ/ケース : TDSON-8
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Brand : Infineon Technologies
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Components Classification : Single FETs, MOSFETs
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日付シート : BSC070N10LS5ATMA1 データシート (PDF)
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Series : BSC070N10LS5
概要 BSC070N10LS5ATMA1
The BSC070N10LS5ATMA1 N-channel power MOSFET from Infineon Technologies is a game-changer for high power applications. With a 100V drain-source voltage and a continuous drain current of 70A, this transistor is designed to meet the demands of server power supplies, telecom and networking equipment, and motor control systems. Its ultra-low on-state resistance of 7.5 mΩ significantly reduces power losses, resulting in improved overall efficiency. The TO-263 package ensures good thermal performance and easy mounting on PCBs, making it ideal for integration into production lines using reflow soldering processes
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Series | BSC070N10 | Product Status | Active |
FET Type | N-Channel | Technology | Si |
Drain to Source Voltage (Vdss) | 100 V | Current - Continuous Drain (Id) @ 25°C | 14A (Ta), 79A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | Rds On (Max) @ Id, Vgs | 7mOhm @ 40A, 10V |
Vgs(th) (Max) @ Id | 2.3V @ 49µA | Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 4.5 V |
Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 2700 pF @ 50 V |
Power Dissipation (Max) | 2.5W (Ta), 83W (Tc) | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | Supplier Device Package | PG-TDSON-8-7 |
Package / Case | TDSON-8 | Base Product Number | BSC070 |
Manufacturer | Infineon | Product Category | MOSFET |
RoHS | Details | Mounting Style | SMD/SMT |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 100 V | Id - Continuous Drain Current | 79 A |
Rds On - Drain-Source Resistance | 7 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 2.3 V | Qg - Gate Charge | 20 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 83 W | Channel Mode | Enhancement |
Brand | Infineon Technologies | Configuration | Single |
Fall Time | 5.3 ns | Forward Transconductance - Min | 36 S |
Product Type | MOSFET | Rise Time | 3.6 ns |
Factory Pack Quantity | 5000 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 20 ns |
Typical Turn-On Delay Time | 6.5 ns | Part # Aliases | BSC070N10LS5 SP001861044 |
Unit Weight | 0.004181 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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