BSC010NE2LS
|
High power 8-pin TDSON EP package MOSFET |
INFINEON |
3,783 |
|
IPC90N04S5L3R3ATMA1
|
N-channel 40V 90A Automotive MOSFET |
Infineon Technologies |
6,218 |
|
BSC096N10LS5ATMA1
|
High-voltage, high-current MOSFET with low on-resistance |
Infineon Technologies |
8,657 |
|
BSC670N25NSFDATMA1
|
The BSC670N25NSFDATMA1 MOSFET has a power dissipation of 150W at 10V and a voltage drop of 4V at a current of 90uA |
Infineon Technologies |
5,613 |
|
BSC093N15NS5ATMA1
|
150V 55A MOSFET |
Infineon Technologies |
8,535 |
|
BSC040N10NS5ATMA1
|
8-pin TDSON EP-packaged MOSFET tailored for automotive environments, engineered for efficient power management |
Infineon Technologies |
7,439 |
|
BSC098N10NS5ATMA1
|
100V power MOSFET with OptiMOS 5 technology |
Infineon Technologies |
8,215 |
|
BSC050N10NS5ATMA1
|
N-CHANNEL, 100V, 100A, 5MOHM, SuperSO8 |
Infineon Technologies |
9,895 |
|
IPG20N10S4L22AATMA1
|
Transistor MOSFET N-channel rated for automotive use |
Infineon Technologies |
5,140 |
|
BSC028N06NSATMA1
|
BSC028N06NSATMA1 is a high-performance N-channel MOSFET suitable for a wide range of applications |
Infineon Technologies |
6,551 |
|
BSC010NE2LSATMA1
|
BSC010NE2LSATMA1 is a high-power N-channel MOSFET transistor with 8 pins in a TDSON EP package, capable of handling up to 39A of current at 25V |
Infineon Technologies |
9,809 |
|
BSC030P03NS3GAUMA1
|
Package type: PG-TDSON-8 |
Infineon Technologies |
8,664 |
|
BSC109N10NS3GATMA1
|
TDSON-8 Package Power Mosfet |
Infineon Technologies |
9,751 |
|
BSC123N08NS3GATMA1
|
Green Plastic Power Field-Effect Transistor with 80V Voltage Rating, 11A Drain Current, 0 |
Infineon Technologies |
7,405 |
|
BSC340N08NS3GATMA1
|
performance N-channel MOSFET with 80V voltage threshold and 23A current capacity |
Infineon Technologies |
9,866 |
|
BSC047N08NS3GATMA1
|
80V N-channel MOSFET transistor with 18A current capacity in TDSON package for automated assembly |
Infineon Technologies |
5,629 |
|
BSC100N06LS3GATMA1
|
N-channel 60V 12A 8-pin TDSON EP T/R transistor |
Infineon Technologies |
7,715 |
|
BSC028N06LS3GATMA1
|
High-performance N-channel MOSFET that can handle 60V and 23A |
Infineon Technologies |
6,797 |
|
BSC035N04LSGATMA1
|
TDSON EP style for enhanced performance |
Infineon Technologies |
9,148 |
|
BSC093N04LSGATMA1
|
Featuring a unipolar configuration |
Infineon Technologies |
9,012 |
|
BSC028N06LS3G
|
Current rating: 23 A |
Infineon Technologies |
9,039 |
|
BSC350N20NSFDATMA1
|
N-channel 200V 35A Transistor MOSFET in 8-pin TDSON EP package, supplied on tape and reel |
Infineon Technologies |
9,744 |
|
BSC034N10LS5ATMA1
|
High-voltage N-channel MOSFET transistor suitable for applications requiring a maximum current of 19 amps |
Infineon Technologies |
8,379 |
|
BSC070N10LS5ATMA1
|
This MOSFET has a voltage rating of 100V and is designed for high efficiency applications |
Infineon Technologies |
7,396 |
|
IPG16N10S461ATMA1
|
Automotive-grade N-channel MOSFET capable of handling up to 100 volts and 16 amps of current, packaged in an 8-pin TDSON EP |
Infineon |
8,844 |
|
IAUC90N10S5N062ATMA1
|
High-capacity N-channel transistor designed for use in automotive electronic systems, capable of handling up to 100V and 90A of current flow |
Infineon Technologies |
8,678 |
|
BSC070N10NS5ATMA1
|
BSC070N10NS5ATMA1 is a powerful SMT OptiMOS Mosfet with a voltage rating of 100V and a current rating of 80A |
Infineon Technologies |
8,549 |
|
ISC230N10NM6ATMA1
|
ISC230N10NM6ATMA1 is a high-voltage TRENCH MOSFET with a rating of 100V or more |
Infineon |
5,254 |
|
BSC040N08NS5ATMA1
|
-Pin TDSON EP, Tape and Reel packaging |
Infineon Technologies |
9,801 |
|
BSC052N08NS5ATMA1
|
80V 95A N-channel Trans MOSFET for Automotive Applications, 8-Pin TDSON EP Package |
Infineon Technologies |
6,283 |
|
BSC016N06NSTATMA1
|
High voltage N-channel MOSFET with 31A current rating |
Infineon |
9,893 |
|
BSC065N06LS5ATMA1
|
BSC065N06LS5ATMA1 stands out among MOSFETs, thanks to its unique differentiation and advanced capabilities |
Infineon |
5,796 |
|
BSC014N06NSTATMA1
|
BSC014N06NSTATMA1 is a 60V, 257A, 1.45mohm OptiMOS Power-Transistor with N-Channel characteristics and TDSON-8 FL packaging |
Infineon |
6,934 |
|
IPG20N06S4L26ATMA1
|
0a continuous drain current and 60v source voltage |
Infineon |
7,487 |
|
BSC094N06LS5ATMA1
|
Transistor MOSFET N-channel with 60V, 8-pin TDSON EP packaging |
Infineon |
5,108 |
|
BSC034N06NSATMA1
|
High Voltage Power MOSFET" |
Infineon |
5,191 |
|
BSC014N04LSIATMA1
|
BSC014N04LSIATMA1 - Power MOSFET, N Channel, 40 V, 100 A, 0.0012 ohm, TDSON, Surface Mount": |
Infineon |
9,868 |
|
BSC010N04LSATMA1
|
High-performance MOSFET featuring an N-type channel |
Infineon |
5,230 |
|
IAUC120N04S6L005ATMA1
|
20V-40V MOSFET for various electronic applications |
Infineon Technologies |
5,539 |
|
IPG20N04S4L08ATMA1
|
N-channel MOSFET: 40V, 20A, TDSON-8 package, OptiMOS-T2 |
Infineon Technologies |
9,153 |
|
IPC50N04S5L5R5ATMA1
|
OptiMOS™ 5 QFN 5X6 40V |
Infineon |
5,539 |
|
BSC032N04LSATMA1
|
BSC032N04LSATMA1 PK Infineon MOSFET |
Infineon Technologies |
6,596 |
|
BSC011N03LSATMA1
|
OptiMOS Power Mosfet with low on-resistance and high conduction capability |
Infineon |
9,751 |
|
BSC0504NSIATMA1
|
MOSFET designed for switching applications |
Infineon |
8,685 |
|
BSC026NE2LS5ATMA1
|
25V 82A N-Channel MOSFET |
Infineon Technologies |
6,346 |
|
BSC009NE2LS5IATMA1
|
8-pin TDSON EP package type for easy installation |
Infineon |
7,799 |
|
BSC050NE2LSATMA1
|
Single N-Channel power MOSFET with 25V voltage rating |
Infineon |
6,657 |
|
BSC0702LSATMA1
|
Transistor for efficient power management |
Infineon Technologies |
5,137 |
|
BSC077N12NS3GATMA1
|
Product BSC077N12NS3GATMA1 is a single N-channel 120-volt power MOSFET with a low on-resistance of 7 |
Infineon Technologies |
7,616 |
|
BSC027N04LSGATMA1
|
The BSC027N04LSGATMA1 MOSFET is characterized by its N-channel design |
Infineon Technologies |
7,679 |
|