BSM120D12P2C005
High-power FET featuring a 120A current rating, 1200V voltage rating, and N-Channel Silicon Carbide construction
在庫：7,392
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
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部品番号 : BSM120D12P2C005
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パッケージ/ケース : Module
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ブランド : Rohm Semiconductor
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コンポーネントの分類 : FET, MOSFET Arrays
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日付シート : BSM120D12P2C005 データシート (PDF)
概要 BSM120D12P2C005
When it comes to high-power industrial applications, the BSM120D12P2C005 IGBT module stands out as a reliable and efficient solution. Boasting a voltage rating of 1200V and a current rating of 105A, this module is well-suited for demanding high-power switching applications. Its compact and lightweight design streamlines integration into existing systems, while its low inductance module construction reduces switching losses and enhances overall efficiency. The BSM120D12P2C005 also features a built-in temperature sensor and overcurrent protection to ensure the safety and reliability of operations. Additionally, its low thermal resistance facilitates effective heat dissipation, making it an ideal choice for industrial applications
応用
- Industrial
- Motor Drive & Control
- Alternative Energy
- Power Management
- Medical
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Package | Bulk | Product Status | Active |
| Technology | Silicon Carbide (SiC) | Configuration | 2 N-Channel (Half Bridge) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) | Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Vgs(th) (Max) @ Id | 2.7V @ 22mA | Input Capacitance (Ciss) (Max) @ Vds | 14000pF @ 10V |
| Power - Max | 780W | Operating Temperature | -40°C ~ 150°C (TJ) |
| Package / Case | Module | Supplier Device Package | Module |
| Base Product Number | BSM120 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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