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SI4401DDY-T1-GE3

Transistor MOSFET P-CH 40V 10.2A 8-Pin SOIC in Tape and Reel packaging

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概要 SI4401DDY-T1-GE3

Introducing the SI4401DDY-T1-GE3, a high-performance P Channel MOSFET designed for demanding applications. With a maximum drain source voltage of -40V and a continuous drain current of -16.1A, this MOSFET offers low on resistance of 0.018ohm, ensuring efficient power management. It can handle a power dissipation of 6.3W and operate in a wide temperature range from -55°C to 150°C. The SOIC transistor case style and 8 pins make it easy to integrate into various circuit designs. Additionally, the MSL rating ensures reliability in different environmental conditions

主な特長

  • 100% Rg tested
  • 100% UIS tested
  • Halogen-free
  • -55 to 150°C Operating temperature range

応用

SWITCHING

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style SMD/SMT Package / Case SOIC-8
Transistor Polarity P-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 40 V Id - Continuous Drain Current 16.1 A
Rds On - Drain-Source Resistance 15 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 1.2 V Qg - Gate Charge 64 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 6.3 W Channel Mode Enhancement
Tradename TrenchFET Series SI4
Brand Vishay Semiconductors Configuration Single
Fall Time 9 ns Forward Transconductance - Min 37 S
Product Type MOSFET Rise Time 11 ns
Factory Pack Quantity 2500 Subcategory MOSFETs
Transistor Type 1 P-Channel Typical Turn-Off Delay Time 45 ns
Typical Turn-On Delay Time 13 ns Part # Aliases SI4401DDY-GE3
Unit Weight 0.026455 oz

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    部品の品質保証: 365 日

    返品・返金：90日以内

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