BSM200GB120DLC
1550mW Dissipation in 62mm Size
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $461.236 | $461.24 |
| 200 | $178.493 | $35,698.60 |
| 500 | $172.219 | $86,109.50 |
| 1000 | $169.120 | $169,120.00 |
在庫：8,361
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : BSM200GB120DLC
-
パッケージ/ケース : 62 mm
-
Brand : Infineon
-
Components Classification : IGBT Modules
-
日付シート : BSM200GB120DLC データシート (PDF)
概要 BSM200GB120DLC
BSM200GB120DLC is designed with precision and quality in mind. Its robust construction and advanced features make it a reliable component for demanding applications. The module's low collector-emitter saturation voltage of 2.6 V ensures efficient operation and minimal power loss. Additionally, its energy dissipation characteristics during make-time and turn-off time, 22 mJ and 23 mJ respectively, contribute to overall energy efficiency. With its half-bridge configuration and 62 mm housing type, BSM200GB120DLC is a versatile and dependable choice for a wide range of electronic systems
主な特長
- Ruggedized against environmental stressors
- Made with high-quality materials only
- Suitable for industrial and commercial applications
応用
- Energy efficient systems
- Advanced electric vehicles
- High performance drives
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Category | IGBT Modules | RoHS | Details |
| Product | IGBT Silicon Modules | Configuration | Half Bridge |
| Collector- Emitter Voltage VCEO Max | 1.2 kV | Collector-Emitter Saturation Voltage | 2.1 V |
| Continuous Collector Current at 25 C | 420 A | Gate-Emitter Leakage Current | 400 nA |
| Pd - Power Dissipation | 1.55 kW | Package / Case | 62 mm |
| Minimum Operating Temperature | - 40 C | Maximum Operating Temperature | + 125 C |
| Brand | Infineon Technologies | Height | 30.5 mm |
| Length | 106.4 mm | Maximum Gate Emitter Voltage | 20 V |
| Mounting Style | Chassis Mount | Product Type | IGBT Modules |
| Factory Pack Quantity | 10 | Subcategory | IGBTs |
| Technology | Si | Width | 61.4 mm |
| Part # Aliases | SP000100715 BSM200GB120DLCHOSA1 | Unit Weight | 13.211054 oz |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
BSC030N08NS5ATMA1
Tape and Reel Packaging for Automated Assembly
BSC035N10NS5ATMA1
High-current N-Channel MOSFET
BSC046N10NS3GATMA1
Trans MOSFET N-CH 100V 17A 8-Pin TDSON EP T/R
BSP170PH6327XTSA1
SIPMOS transistor BSP170PH6327XTSA1 designed for high efficiency and low power consumption
BSH103,235
TO-236AB package
BBS3002-TL-1E
With a voltage rating of 60V and a maximum current of 100A
BCM857BS,115
5V 100mA 2PCSPNP SOT-363
BS170FTA
N-channel SOT-23 MOSFET with a rating of 60 volts and a current consumption of 150 microamps at 5 ohms when supplied with 10 volts
BSB044N08NN3GXUMA1
N-type Silicon MOSFET Transistor with 80V Voltage Rating and 18A Current Capacity for Automotive Applications
BSC009NE2LS5ATMA1
Transistor MOSFET N-channel 25V 41A 8-pin TDSON EP tape and reel
2SD2704KT146
Small Signal NPN Si Transistor 20 V 300 mA
IRGP35B60PDPBF
Tube packaging of Transistor IGBT Chip with N-Channel, 600V 60A 308W
IXTK32P60P
Field-Effect Transistor for power applications
TIPL762
Bipolar Transistors - BJT
IRFR3806PBF
MOSFET N-Channel 60V 43A DPAK
IRF7303PBF
IRF7303PBF: Power MOSFET with 30V dual N-channel design, 50mOhms resistance, and 16.7nC gate charge
BDX33CG
Plastic/Epoxy 3 Pin Transistor
SPD06N80C3ATMA1
N-channel 800V 6A Power MOSFET, in DPAK package, on Tape and Reel
IGW15T120
IGBT Transistors: Low Loss IGBT Technology, 1200V, 15A
DMN5L06DWK-7
Diodes Inc DMN5L06DWK-7 Dual N-channel MOSFET Transistor, 0.305 A, 50 V, 6-Pin SOT-363