IRGP35B60PDPBF
Tube packaging of Transistor IGBT Chip with N-Channel, 600V 60A 308W
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部品番号 : IRGP35B60PDPBF
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パッケージ/ケース : TO-247-3
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Brand : Infineon
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Components Classification : Single IGBTs
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日付シート : IRGP35B60PDPBF データシート (PDF)
概要 IRGP35B60PDPBF
Temperature concerns are a thing of the past with the IRGP35B60PDPBF, boasting a maximum junction temperature of 175°C. This design consideration underscores its durability in environments where heat is a constant challenge, making it a dependable choice for industrial settings where performance under pressure is non-negotiable
主な特長
- High speed switching capabilities
- Silicon-based power electronics component
- Laser-diode triggered switching performance
- High-frequency voltage regulation applications
- Efficient power conversion technology solutions
- Compact and reliable power module design
応用
- Solar inverters
- Power factor correction circuits
- UPS systems
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Category | IGBT Transistors | RoHS | Details |
| Technology | Si | Package / Case | TO-247-3 |
| Mounting Style | Through Hole | Configuration | Single |
| Collector- Emitter Voltage VCEO Max | 600 V | Collector-Emitter Saturation Voltage | 1.85 V |
| Maximum Gate Emitter Voltage | - 20 V, + 20 V | Continuous Collector Current at 25 C | 60 A |
| Pd - Power Dissipation | 308 W | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Brand | Infineon Technologies |
| Continuous Collector Current Ic Max | 60 A | Gate-Emitter Leakage Current | 100 nA |
| Height | 20.7 mm | Length | 15.87 mm |
| Product Type | IGBT Transistors | Factory Pack Quantity | 400 |
| Subcategory | IGBTs | Width | 5.31 mm |
| Unit Weight | 1.340411 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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