BSM35GP120G
Power insulated gate bipolar transistor modules with 1200V and 35A ratings
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $414.052 | $414.05 |
200 | $160.232 | $32,046.40 |
500 | $154.602 | $77,301.00 |
1000 | $151.819 | $151,819.00 |
在庫:8,418
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
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部品番号 : BSM35GP120G
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パッケージ/ケース : Module
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ブランド : Infineon Technologies
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コンポーネントの分類 : IGBT Modules
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日付シート : BSM35GP120G データシート (PDF)
概要 BSM35GP120G
IGBT Module Full Bridge 1200 V 45 A 230 W Chassis Mount Module
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Package | Tray | Product Status | Obsolete |
Configuration | Full Bridge | Voltage - Collector Emitter Breakdown (Max) | 1200 V |
Current - Collector (Ic) (Max) | 45 A | Power - Max | 230 W |
Vce(on) (Max) @ Vge, Ic | 2.85V @ 15V, 35A | Current - Collector Cutoff (Max) | 500 µA |
Input Capacitance (Cies) @ Vce | 1.5 nF @ 25 V | Input | Three Phase Bridge Rectifier |
NTC Thermistor | Yes | Operating Temperature | -40°C ~ 125°C |
Mounting Type | Chassis Mount | Package / Case | Module |
Supplier Device Package | Module | Base Product Number | BSM35G |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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