IXSH35N140A
IXSH35N140A: N-Channel Insulated Gate Bipolar Transistor (IGBT) Chip, 1400V, 70A, 300mW, TO-247AD Configuration
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部品番号 : IXSH35N140A
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パッケージ/ケース : TO247-3
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Brand : IXYS
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Components Classification : Single IGBTs
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日付シート : IXSH35N140A データシート (PDF)
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Series : IXSH35N140
概要 IXSH35N140A
Designed with precision, the IXSH35N140A is a standout high-voltage integrated circuit that excels in power conversion applications. Its N-channel enhancement mode insulated gate bipolar transistor (IGBT) configuration, combined with a breakdown voltage of 1400V and a maximum collector current of 35A, delivers exceptional efficiency and swift switching speeds. This makes it the perfect choice for a wide array of power electronics applications, including motor drives, inverters, and industrial power supplies
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Category | IGBT Transistors | RoHS | Details |
| Technology | Si | Package / Case | TO-247-3 |
| Mounting Style | Through Hole | Configuration | Single |
| Collector- Emitter Voltage VCEO Max | 1.4 kV | Collector-Emitter Saturation Voltage | 4 V |
| Maximum Gate Emitter Voltage | - 20 V, + 20 V | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Series | IXSH35N140 |
| Brand | IXYS | Continuous Collector Current | 70 A |
| Continuous Collector Current Ic Max | 70 A | Height | 21.46 mm |
| Length | 16.26 mm | Product Type | IGBT Transistors |
| Factory Pack Quantity | 30 | Subcategory | IGBTs |
| Width | 5.3 mm | Unit Weight | 0.229281 oz |
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部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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