BSM50GD120DN2G
High-Voltage IGBT Modules Suitable for Three-Phase Applications
在庫：8,523
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- 365日の品質保証
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部品番号 : BSM50GD120DN2G
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パッケージ/ケース : EconoPACK 3A
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ブランド : Infineon
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コンポーネントの分類 : IGBT Modules
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日付シート : BSM50GD120DN2G データシート (PDF)
概要 BSM50GD120DN2G
The BSM50GD120DN2G's low conduction and switching losses pave the way for efficient power conversion and diminish thermal stress on the overall system. This means that users can trust in the module's ability to deliver consistent and reliable performance, even under extreme conditions
主な特長
- Advanced Power Control
- Rapid Switching Speed
- High Efficiency Guaranteed
応用
- Energy efficiency
- Electric propulsion
- Smart battery systems
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Category | IGBT Modules | RoHS | N |
| Product | IGBT Silicon Modules | Configuration | Hex |
| Collector- Emitter Voltage VCEO Max | 1.2 kV | Collector-Emitter Saturation Voltage | 2.5 V |
| Continuous Collector Current at 25 C | 78 A | Gate-Emitter Leakage Current | 200 nA |
| Pd - Power Dissipation | 400 W | Package / Case | EconoPACK 3A |
| Minimum Operating Temperature | - 40 C | Maximum Operating Temperature | + 150 C |
| Brand | Infineon Technologies | Height | 17 mm |
| Length | 122 mm | Maximum Gate Emitter Voltage | 20 V |
| Mounting Style | Chassis Mount | Product Type | IGBT Modules |
| Factory Pack Quantity | 10 | Subcategory | IGBTs |
| Technology | Si | Width | 62 mm |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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