STGD5NB120SZT4
Trans IGBT Chip N-CH 1200V 10A 75W 3-Pin(2+Tab) DPAK T/R
在庫:9,408
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部品番号 : STGD5NB120SZT4
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パッケージ/ケース : DPAK
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ブランド : Stmicroelectronics
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コンポーネントの分類 : Single IGBTs
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日付シート : STGD5NB120SZT4 データシート (PDF)
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Series : STGD5NB120SZ
概要 STGD5NB120SZT4
The STGD5NB120SZT4 is an advanced IGBT transistor with a collector current of 10A and a collector emitter saturation voltage of 1.2kV. With a power dissipation of 75W, this transistor is designed for high-power electronic applications. The TO-252-3 case style and 3 pins facilitate easy integration into electronic circuits, while its automotive qualification and MSL 1 - Unlimited rating ensure reliability in automotive applications. The transistor can operate in a wide temperature range, from -55°C to 150°C, making it suitable for use in various environments. Furthermore, it does not contain any SVHC, making it safe for use in electronic devices. Its high collector emitter voltage of 1.2kV makes it ideal for power electronics, motor control, and other high voltage applications
主な特長
- Wide range frequency response and low distortion
- High common-mode rejection ratio (CMRR)
- Low noise and ripple power supply
- EMI and RFI immunity testing passed
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Operating Temp Min Celsius | -55.0 | Operating Temp Max Celsius | 150.0 |
ECCN US | EAR99 | ECCN EU | NEC |
Packing Type | Tape And Reel | RoHs compliant | Ecopack2 |
Grade | Industrial | Package Name | DPAK |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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