BSM75GAL120DN2
IGBT Modules for Chopper Applications 1200V 75A
在庫：6,635
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : BSM75GAL120DN2
-
パッケージ/ケース : Half Bridge GAL 1
-
Brand : Infineon
-
Components Classification : IGBT Modules
-
日付シート : BSM75GAL120DN2 データシート (PDF)
概要 BSM75GAL120DN2
IGBT Module Single Switch 1200 V 105 A 625 W Chassis Mount Module
主な特長
- Rapid thermal response for improved performance
- Dual-charge pump for enhanced voltage regulation
- Low noise and vibration for quiet operation
応用
- Electric cars
- Solar power
- Industrial use
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Category | IGBT Modules | RoHS | Details |
| Product | IGBT Silicon Modules | Configuration | Half Bridge |
| Collector- Emitter Voltage VCEO Max | 1.2 kV | Collector-Emitter Saturation Voltage | 2.5 V |
| Continuous Collector Current at 25 C | 105 A | Gate-Emitter Leakage Current | 400 nA |
| Pd - Power Dissipation | 625 W | Package / Case | Half Bridge GAL 1 |
| Minimum Operating Temperature | - 40 C | Maximum Operating Temperature | + 150 C |
| Brand | Infineon Technologies | Height | 30.5 mm |
| Length | 94 mm | Maximum Gate Emitter Voltage | 20 V |
| Mounting Style | Chassis Mount | Product Type | IGBT Modules |
| Factory Pack Quantity | 10 | Subcategory | IGBTs |
| Technology | Si | Width | 34 mm |
| Part # Aliases | SP000106455 BSM75GAL120DN2HOSA1 | Unit Weight | 8.342997 oz |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
BSC030N08NS5ATMA1
Tape and Reel Packaging for Automated Assembly
BSC035N10NS5ATMA1
High-current N-Channel MOSFET
BSC046N10NS3GATMA1
Trans MOSFET N-CH 100V 17A 8-Pin TDSON EP T/R
BSP170PH6327XTSA1
SIPMOS transistor BSP170PH6327XTSA1 designed for high efficiency and low power consumption
BSH103,235
TO-236AB package
BBS3002-TL-1E
With a voltage rating of 60V and a maximum current of 100A
BCM857BS,115
5V 100mA 2PCSPNP SOT-363
BS170FTA
N-channel SOT-23 MOSFET with a rating of 60 volts and a current consumption of 150 microamps at 5 ohms when supplied with 10 volts
BSB044N08NN3GXUMA1
N-type Silicon MOSFET Transistor with 80V Voltage Rating and 18A Current Capacity for Automotive Applications
BSC009NE2LS5ATMA1
Transistor MOSFET N-channel 25V 41A 8-pin TDSON EP tape and reel
IPC50N04S55R8ATMA1
Automotive-grade N-Channel MOSFET with 40V Voltage Rating and 50A Current Capacity
IXZ318N50
Silicon N-Channel Metal-oxide Semiconductor FET
SI4401DY
40V MOSFET with a current capacity of 10.5A and power rating of 3W
RFP8P05
Unavailable for purchase
NVMFS5C646NLAFT1G
MOSFET transistor for 60V applications
2SC4153
NPN Bipolar Junction Transistor 120V 7A TO-220F Package
IRGPC50F
With its TO-247AC housing, this IGBT chip offers a rugged and reliable solution for power electronics designs
DMP3020LSS-13
P-Channel MOSFET transistor with a 30V voltage rating and 12A current rating in an SOP package with 8 pins on a reel
IXXK110N65B4H1
TO-264 IGBT capable of handling 650 Volts at 250 Amps
MRF166W
RF MOSFET Transistors Transistor