• packageimg
packageimg

NVMFS5C646NLAFT1G

MOSFET transistor for 60V applications

在庫：6,545

  • 90日間のアフター保証
  • 365日の品質保証
  • 正規品保証
  • 7*24時間サービス検疫

迅速な見積もり

見積もりリクエストを送信してください NVMFS5C646NLAFT1G このフォームを使用してください。また、次の電子メールでご連絡いただくこともできます Email: [email protected], 12時間以内に返信させていただきます。

概要 NVMFS5C646NLAFT1G

The NVMFS5C646NLAFT1G PowerTrench® MOSFET by ON Semiconductor is a high-performance N-channel enhancement mode power FET that caters to the demands of modern power management applications. With a robust drain-source voltage of 30V and a continuous drain current rating of 67A, this MOSFET offers exceptional reliability and efficiency in a compact package. Its low on-resistance of 4.6mΩ at a Vgs of 10V ensures minimal conduction losses, making it an ideal choice for various electronic devices requiring efficient power management

主な特長

  • NVMFS5C646NLAFT1G is a high-power N-channel MOSFET for automotive and industrial applications
  • The device features low on-resistance of 5.6mΩ and fast switching performance for efficient energy transfer
  • Designed for use in harsh environments, it offers improved reliability and reduced thermal resistance
  • This MOSFET has a voltage rating of 40V and a continuous drain current rating of 120A for high-power applications
  • The compact and thermally efficient package design helps to reduce power loss and increase efficiency
  • This N-channel MOSFET is suitable for use in power electronic circuits, motor control, and energy storage systems

応用

  • Overvoltage protection circuits
  • DC-DC converter designs
  • Electronic motor control

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Status Active Compliance PbAHP
Package Type SO-8FL / DFN-5 Case Outline 488AA
MSL Type 1 MSL Temp (°C) 260
Container Type REEL Container Qty. 1500
ON Target Y Channel Polarity N-Channel
Configuration Single V(BR)DSS Min (V) 60
VGS Max (V) ±20 VGS(th) Max (V) 2
ID Max (A) 93 PD Max (W) 79
RDS(on) Max @ VGS = 4.5 V (mΩ) 6.3 RDS(on) Max @ VGS = 10 V (mΩ) 4.7
Qg Typ @ VGS = 4.5 V (nC) 15.7 Qg Typ @ VGS = 10 V (nC) 33.7
Ciss Typ (pF) 2164 Pricing ($/Unit) $0.8503

保証と返品

保証、返品、および追加情報

  • QAと返品ポリシー

    部品の品質保証: 365 日

    返品・返金：90日以内

    返品・交換：90日以内

  • 配送と梱包

    配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。

    部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。

  • 支払い

    たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。

    特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。

IRFP250MPBF

IRFP250MPBF

Silicon N-channel MOSFET with 200V voltage and 30A current in TO-247AC casing
CSD18534Q5AT

CSD18534Q5AT

Single SON 5 mm x 6 mm
SBCP53-16T1G

SBCP53-16T1G

80V Voltage Rating
CLA80MT1200NHB

CLA80MT1200NHB

HIGH EFFICIENCY THYRISTOR
RQ5A030APTL

RQ5A030APTL

TSMT3-packaged P-MOSFET transistor engineered for unipolar -12V operation and -3A current flow
Q6006LTH

Q6006LTH

Product Q6006LTH is equipped with Triacs rated at 600 volts and 6 amps, featuring a gate trigger voltage range of 33/43 volts
KST92MTF

KST92MTF

Product KST92MTF is a Transistor, General Purpose Bipolar (BJT), PNP type, capable of handling voltages up to 300V and currents up to 0
AOD11S60

AOD11S60

AOD11S60: N-Channel 600V 11A Power MOSFET with DPAK Package
T3035H-6I

T3035H-6I

TRIAC 600V 284A 3-Pin(3+Tab) TO-220AB Insulated Tube
CSD19535KTTT

CSD19535KTTT

Trans MOSFET N-CH Si 100V 200A 4-Pin(3+Tab) DDPAK T/R