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BSP297H6327XTSA1

BSP297H6327XTSA1 from Infineon is an N-channel MOSFET transistor, capable of handling currents up to 0

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概要 BSP297H6327XTSA1

The BSP297H6327XTSA1 is a reliable and robust N-channel power MOSFET designed to withstand demanding operating conditions. With a high avalanche energy rating of 361mJ, it can endure transient voltage spikes and overcurrent conditions without sustaining damage, ensuring long-term reliability. Additionally, its low input capacitance of 2520pF allows for fast switching speeds, making it suitable for applications requiring rapid response times and efficient energy management. These features, combined with its maximum drain-source voltage of 60V and continuous drain current of 20A, make the BSP297H6327XTSA1 an excellent choice for power supplies, motor control, and high current switching circuits. Its TO-263 package provides good thermal performance and easy PCB mounting, further enhancing its suitability for a wide range of applications. And with a gate threshold voltage of 2.5V, it is compatible with most logic-level gate drive circuits, making it easy to integrate into various designs

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Series SIPMOS® Product Status Active
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V Current - Continuous Drain (Id) @ 25°C 660mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.8Ohm @ 660mA, 10V
Vgs(th) (Max) @ Id 1.8V @ 400µA Gate Charge (Qg) (Max) @ Vgs 16.1 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 357 pF @ 25 V
Power Dissipation (Max) 1.8W (Ta) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Supplier Device Package PG-SOT223-4
Package / Case TO-261-4, TO-261AA Base Product Number BSP297

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    部品の品質保証: 365 日

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