BSS138Q-7-F
Transistor MOSFET N-channel for automotive use, with a voltage rating of 50V and a current rating of 0.2A
数量 | 単価(USD) | 合計金額 |
---|---|---|
10 | $0.052 | $0.52 |
100 | $0.042 | $4.20 |
300 | $0.036 | $10.80 |
3000 | $0.032 | $96.00 |
6000 | $0.029 | $174.00 |
9000 | $0.027 | $243.00 |
在庫:9,367
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : BSS138Q-7-F
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パッケージ/ケース : SOT23-3
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ブランド : Diodes Incorporated
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コンポーネントの分類 : Single FETs, MOSFETs
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日付シート : BSS138Q-7-F データシート (PDF)
概要 BSS138Q-7-F
ON Semiconductor's BSS138Q-7-F MOSFET is designed to meet the requirements of low voltage and low current applications, offering a voltage rating of up to 50 volts and a current handling capacity of 200 mA. Its small SOT-23-3 package makes it space-efficient and suitable for use in compact electronic designs, while its low threshold voltage and low ON-resistance make it an ideal choice for low voltage switching applications. Whether it's power management in battery-operated devices or level shifting in low voltage systems, this MOSFET provides efficient and reliable performance. For detailed specifications and application guidelines, consult the datasheet provided by ON Semiconductor
主な特長
- The BSS138Q-7-F N-channel FET has a high level of reliability
- with a maximum drain-source voltage of 50V and continuous drain current of 220mA
- It is widely used in load switching and level shifting circuits
応用
- Versatile and compact design
- Efficient power usage
- Reliable performance in all conditions
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SOT-23-3 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 50 V |
Id - Continuous Drain Current | 200 mA | Rds On - Drain-Source Resistance | 3.5 Ohms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 500 mV |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 300 mW | Channel Mode | Enhancement |
Qualification | AEC-Q101 | Series | BSS138 |
Brand | Diodes Incorporated | Configuration | Single |
Forward Transconductance - Min | 100 mS | Product Type | MOSFET |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 20 ns |
Typical Turn-On Delay Time | 20 ns | Unit Weight | 0.000282 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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