|
MMBD4148SE
|
Diode Small Signal Switching 100V 0.2A 3-Pin SOT-23 T/R |
Onsemi |
6,070 |
|
|
SI2356DS-T1-GE3
|
Maximum current rating of 3.2 amps |
Vishay |
7,470 |
|
|
SI2369DS-T1-GE3
|
SOT-23 MOSFET: Specifically engineered for -30V Vds and 20V Vgs, suitable for various circuit designs |
Vishay |
5,453 |
|
|
TLE4906K
|
Hall Effect Sensor 20mA 3.3V/5V/9V/12V/15V 3-Pin SC-59 T/R |
INFINEON |
4,461 |
|
|
ZLLS1000TA
|
ZLLS1000TA, Schottky Diode, 1.16A max, 40V 4ns, 3-Pin, SOT-23 |
Diodes Incorporated |
7,593 |
|
|
ZXMP10A13FTA
|
ZXMP10A13FTA is a single NPN bipolar transistor by STMicroelectronics |
Diodes Incorporated |
8,161 |
|
|
SI2333DDS-T1-GE3
|
SOT-23 MOSFET designed for P Channel operation, featuring a 12V voltage rating and a resistance of 28mΩ at 4.5V for currents up to 6A |
Vishay |
7,339 |
|
|
MAX809TEUR+T
|
This product, MAX809TEUR+T, features a 3.08V threshold, a 0.14 second reset time, and comes in a 3SOT23 package |
Analog Devices |
8,849 |
|
|
SI2305CDS-T1-GE3
|
Small Signal Field-Effect Transistor, P-Channel Silicon MOSFET, 1-Element |
Vishay |
8,501 |
|
|
DMP3098L-7
|
098L Series 30 V 70 mOhm P-Channel, SOT-23-3, 30 V 70 mOhm P-Channel |
Diodes Incorporated |
7,641 |
|
|
BZX84C12-7-F
|
Diode Zener 12V 5.3% 350mW SOT23 |
Diodes Incorporated |
4,135 |
|
|
2N7002AQ-7
|
N-channel MOSFET transistor for automotive applications, capable of handling up to 60 volts and 0 |
Diodes Incorporated |
7,946 |
|
|
SI2323DS-T1-E3
|
SI2323DS-T1-E3 is a P-type MOSFET with SOT-23 packaging |
Vishay |
8,587 |
|
|
SI2365EDS-T1-GE3
|
Lead-Free ROHS Compliance |
Vishay |
3,707 |
|
|
DMN601K-7
|
SOT23 packaged N-MOSFET transistor with 0.8A Idm and 350mW power dissipation capability |
Diodes Incorporated |
8,425 |
|
|
NUP2105LT1G
|
ON Semiconductor NUP2105LT1G Dual Bi-Directional TVS Diode 350W 3-Pin SOT-23 |
Onsemi |
7,611 |
|
|
SI2343CDS-T1-GE3
|
SI2343CDS-T1-GE3 features a P-channel design and a 30-volt rating |
Vishay |
8,403 |
|
|
TP0610K-T1-E3
|
Transistor suitable for circuits requiring 60 volts and 0.185 amps |
Vishay |
3,848 |
|
|
SI2305DS-T1-E3
|
RoHS Compliant Package-3 |
Vishay |
9,797 |
|
|
MMBT3904-7-F
|
-Element Bipolar Transistor |
Diodes Incorporated |
5,288 |
|
|
DMP3099L-7
|
SOT23 Package Enhancement Mode |
Diodes Incorporated |
8,564 |
|
|
DMP2035U-7
|
The DMP2035U-7 is a P-channel MOSFET designed to handle a maximum voltage of 20V and a current of 4 |
Diodes Incorporated |
8,234 |
|
|
BSS84-7-F
|
BSS84-7-F - MOSFETP50V0.13ASOT23, RL |
Diodes Incorporated |
4,011 |
|
|
BSH103,215
|
N-channel MOSFET transistor with 30V voltage and 0.85A current |
Nexperia |
7,462 |
|
|
BSS138-7-F
|
With an On Resistance rating, this MOSFET operates with an N Channel polarity and can handle a Source Voltage of 50V |
Diodes Incorporated |
4,842 |
|
|
A3212ELHLT-T
|
Automotive Hall Effect Sensor with 1mA sensitivity and Omnipolar functionality, rated at 2.75V |
Allegro Microsystems |
7,781 |
|
|
FMMT618TA
|
15V, 2A NPN transistor packaged in SOT23 |
Diodes Incorporated |
5,069 |
|
|
FMMT620TA
|
5A current rating |
Diodes Incorporated |
8,549 |
|
|
BAV99-7-F
|
ns response time diode |
Diodes Incorporated |
8,317 |
|
|
SI2337DS-T1-E3
|
P-channel MOSFET |
Vishay |
7,542 |
|
|
SI2323DS-T1-GE3
|
Description: ROHS compliant SOT-23 MOSFETs capable of handling 4.7A current at 750mW power dissipation |
Vishay |
9,133 |
|
|
2N7002K-T1-GE3
|
The 2N7002K-T1-GE3 is an N-channel MOSFET featuring ESD protection, able to handle currents of 0 |
Vishay |
7,503 |
|
|
SI2309CDS-T1-GE3
|
Lead-free SOT-23 MOSFETs |
Vishay |
4,493 |
|
|
SI2333CDS-T1-GE3
|
Product Code: SI2333CDS-T1-GE3 - A surface mount power MOSFET with a P-channel configuration |
Vishay |
4,455 |
|
|
SI2302CDS-T1-GE3
|
SOT-23-packaged N-channel MOSFET capable of handling 20 volts and a current of 2.6 amps, identified as SI2302CDS-T1-GE3 |
Vishay |
6,567 |
|
|
SI2347DS-T1-GE3
|
SOT23-packaged P-MOSFET transistor with unipolar operation |
Vishay |
7,645 |
|
|
TLV76012DBZR
|
High-performance linear voltage regulator for precise power management |
TI |
7,794 |
|
|
ESDA14V2L
|
ESD Suppressor Diode Array Uni-Dir/Bi-Dir 12V 3-Pin SOT-23 T/R |
ST |
4,862 |
|
|
NTR4171PT1G
|
NTR4171PT1G is a power MOSFET in a surface mount package |
Onsemi |
7,739 |
|
|
BC857CLT1G
|
TO-236AB packaged silicon transistor with a single element, suitable for small signal applications |
Onsemi |
5,689 |
|
|
BC856ALT1G
|
The BC856ALT1G transistor is surface mount technology (SMT) compatible |
Onsemi |
7,228 |
|
|
KST10MTF
|
23 Transistor NPN 25V 350mW RF BJT |
Onsemi |
7,962 |
|
|
SZNUP3105LT1G
|
Bi-Directional ESD Protection |
Onsemi |
5,363 |
|
|
BC847CLT1G
|
Transistor in SOT-23 Package, NPN Bipolar Junction Type with 45V Voltage and 0.1A Current |
Onsemi |
8,655 |
|
|
BC847BLT1G
|
The BC847BLT1G device is a NPN transistor that can handle currents up to 100mA and voltages up to 45V, packaged in SOT23 |
Onsemi |
6,848 |
|
|
BC847ALT1G
|
47ALT1G is a 3-Pin SOT-23 packaged Bipolar Transistor with NPN configuration |
Onsemi |
9,398 |
|
|
BC817-40LT1G
|
NPN Silicon Transistor TO-236 Package |
Onsemi |
8,213 |
|
|
BC817-16LT1G
|
NPN Bipolar Transistors with 500mA and 50V rating |
Onsemi |
7,397 |
|
|
MMBT2222LT1G
|
NPN SOT-23 Bipolar Transistors |
Onsemi |
7,382 |
|
|
MMUN2214LT1G
|
SOT-23 T/R Trans Digital BJT NPN 50V 100mA 400mW |
Onsemi |
7,931 |
|
