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BSS84XHZGG2CR

Trans MOSFET P-CH 60V 0.23A Automotive 3-Pin DFN-W T/R

数量 単価(USD) 合計金額
1 $0.184 $0.18
200 $0.071 $14.20
500 $0.068 $34.00
1000 $0.067 $67.00

在庫：7,736

*価格は参考値です。
  • 90日間のアフター保証
  • 365日の品質保証
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概要 BSS84XHZGG2CR

The BSS84XHZG MOSFET's ability to provide superior mounting reliability and automotive-grade performance sets it apart as a key component for automotive electronics. Its AEC-Q101 qualification guarantees its suitability for use in extreme conditions, while ROHM's Wettable Flank formation technology ensures consistent solder quality, simplifying the verification of solder conditions after mounting. This technology enables automatic inspection machines to easily confirm the integrity of the solder, enhancing the overall reliability of the manufacturing process. Furthermore, the BSS84XHZG MOSFET's capacity for miniaturization makes it an ideal choice for automotive components, such as ECU and ADAS camera modules, contributing to the development of more advanced and space-efficient automotive electronics

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Product Status Active FET Type P-Channel
Technology Si Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 230mA (Ta) Rds On (Max) @ Id, Vgs 5.3Ohm @ 230mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 100µA Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 34 pF @ 30 V Power Dissipation (Max) 1W (Ta)
Operating Temperature 150°C (TJ) Grade Automotive
Qualification AEC-Q101 Mounting Type Surface Mount
Supplier Device Package DFN1010-3W Package / Case DFN-3
Base Product Number BSS84 Manufacturer ROHM Semiconductor
Product Category MOSFET RoHS Details
Mounting Style SMD/SMT Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 230 mA Rds On - Drain-Source Resistance 5.3 Ohms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 1 W Channel Mode Enhancement
Brand ROHM Semiconductor Fall Time 56 ns
Forward Transconductance - Min 0.2 S Product Type MOSFET
Rise Time 22 ns Factory Pack Quantity 100
Subcategory MOSFETs Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 140 ns Typical Turn-On Delay Time 12 ns
Part # Aliases BSS84XHZG

保証と返品

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  • QAと返品ポリシー

    部品の品質保証: 365 日

    返品・返金：90日以内

    返品・交換：90日以内

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