BUF420M
High Voltage NPN Transistor
在庫：8,246
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部品番号 : BUF420M
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パッケージ/ケース : TO-3
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Brand : Stmicroelectronics
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Components Classification : Single Bipolar Transistors
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日付シート : BUF420M データシート (PDF)
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Series : BUF420M
概要 BUF420M
Bipolar (BJT) Transistor NPN 450 V 30 A 275 W Through Hole TO-3
主な特長
- Rugged construction
- Durable in harsh conditions
- Maintenance-friendly design
応用
- Amplify signal power
- RF signal boosting
- High power output
- Enhance transmission
- Maximize signal strength
- Boost radio frequency
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Category | Bipolar Transistors - BJT | RoHS | Details |
| Mounting Style | Through Hole | Package / Case | TO-3 |
| Transistor Polarity | NPN | Configuration | Single |
| Collector- Emitter Voltage VCEO Max | 450 V | Collector- Base Voltage VCBO | 850 V |
| Emitter- Base Voltage VEBO | 7 V | Maximum DC Collector Current | 30 A |
| Pd - Power Dissipation | 275 W | Minimum Operating Temperature | - 65 C |
| Maximum Operating Temperature | + 150 C | Series | BUF420M |
| Brand | STMicroelectronics | Continuous Collector Current | 30 A |
| Height | 8.7 mm | Length | 39.5 mm |
| Product Type | BJTs - Bipolar Transistors | Factory Pack Quantity | 20 |
| Subcategory | Transistors | Technology | Si |
| Width | 26.2 mm | Unit Weight | 0.225789 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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