CM150DU-24NFH
Ideal for industrial and commercial use
在庫:5,729
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : CM150DU-24NFH
-
パッケージ/ケース : Module
-
Brand : Powerex Inc.
-
Components Classification : IGBT Modules
-
日付シート : CM150DU-24NFH データシート (PDF)
概要 CM150DU-24NFH
The CM150DU-24NFH is a cutting-edge power semiconductor module manufactured by Mitsubishi Electric. With a rated voltage of 1200V and a maximum current rating of 150A, this dual IGBT module incorporates the latest IGBT technology, ensuring optimum performance and reliability in a wide range of power electronic applications
主な特長
- Rise and Fall Times
- High Speed Switching
- Safe Operating Area
- UL Certification Marked
応用
- Industry applications
- Energy solutions
- Power management
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Series | IGBTMOD™ | Package | Bulk |
Product Status | Obsolete | Configuration | Half Bridge |
Voltage - Collector Emitter Breakdown (Max) | 1200 V | Current - Collector (Ic) (Max) | 150 A |
Power - Max | 650 W | Vce(on) (Max) @ Vge, Ic | 6.5V @ 15V, 150A |
Current - Collector Cutoff (Max) | 1 mA | Input Capacitance (Cies) @ Vce | 24 nF @ 10 V |
Input | Standard | NTC Thermistor | No |
Operating Temperature | -40°C ~ 150°C (TJ) | Mounting Type | Chassis Mount |
Package / Case | Module | Supplier Device Package | Module |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![CM800DZ-34H](/files/uploads/product/s/70fea8f8a3ec4de29b0a33c2ccdbb4e0.webp)
CM800DZ-34H
800A Insulated Gate Bipolar Transistor with a 1700V Breakdown Voltage, N-Channel Configuration, and MODULE-10 Form Factor
![BCM857DS,135](/img/package/sc70.jpg)
BCM857DS,135
Trans GP BJT PNP 45V 0.1A 380mW Automotive AEC-Q101 6-Pin TSOP T/R
![BCM857BS,115](/img/package/sc70.jpg)
BCM857BS,115
5V 100mA 2PCSPNP SOT-363
![CM1200HC-66H](/img/package/module.jpg)
CM1200HC-66H
3300V Voltage Breakdown N-Channel IGBT
![CM600E2Y-34H](/img/package/module.jpg)
CM600E2Y-34H
IGBT Modules for High Voltage Chopper Application
![BCM847BS,115](/img/package/sc70.jpg)
BCM847BS,115
Trans GP BJT NPN 45V 0.1A 300mW Automotive AEC-Q101 6-Pin TSSOP T/R
![FCMT080N65S3](/img/package/tdfn6.jpg)
FCMT080N65S3
Power MOSFET, N-Channel, SUPERFET III, Easy-Drive 650 V, 38 A, 80 mOhm
![PMCM4401UNEZ](/img/package/wlcsp4.jpg)
PMCM4401UNEZ
Trans MOSFET N-CH 20V 4.2A 4-Pin WLCSP T/R
![CM400HA-28H](/img/package/module.jpg)
CM400HA-28H
N-channel IGBT Module rated at 1.4KV and 400A, designated as CM400HA-28H
![CM2400HCB-34N](/img/package/module.jpg)
CM2400HCB-34N
Insulated Gate Bipolar Transistor, 2400A Collector Current, 1700V Breakdown Voltage, N-Channel, MODULE-9
![DMN32D2LDF-7](/files/uploads/product/s/c66a70b319e54acebef5ed249ada84a7.webp)
DMN32D2LDF-7
SOT-353 0.4A 30V Dual N-channel
![MMBT3906,215](/img/package/sot233.jpg)
MMBT3906,215
PNP switching transistor in a compact SOT23 (SC-70) Surface-Mounted Device (SMD) plastic package
![IRFP3710PBF](/img/package/to247.jpg)
IRFP3710PBF
Transistor MOSFET N-channel with 100V voltage rating and 57A current capacity in a TO-247AC package
![BSZ110N08NS5ATMA1](/img/package/son8.jpg)
BSZ110N08NS5ATMA1
0V N-Channel MOSFET with 40A Continuous Drain Current
![DMG6402LVT-7](/img/package/sot26.jpg)
DMG6402LVT-7
Specifications: 7A 1.75W 2V@250uA
![IXFH21N50](/img/package/to247.jpg)
IXFH21N50
Silicon-based N-Channel Power FET: 21A Drain Current, 500V Voltage, 0.25ohm On-Resistance, TO-247AD Package, 3-Pin Configuration
![NTMFS4C029NT1G](/img/package/so8.jpg)
NTMFS4C029NT1G
Power MOSFET with 30V Voltage Rating and 46A Current Capacity, Single N-Channel, SO-8 FL Package
![2SK4097LS](/img/package/ll34.jpg)
2SK4097LS
The 2SK4097LS comes in a TO-220FI(LS) package and is compliant with ROHS standards
![BC848ALT1G](/files/uploads/product/s/497dd5e4ded64c55be434b59e74e54d5.webp)
BC848ALT1G
Bipolar NPN Transistor
![FQB19N20LTM](/img/package/d2pak3.jpg)
FQB19N20LTM
This Power MOSFET is an N-Channel device suitable for logic level applications, incorporating QFET® technology for enhanced performance