CM15TF-24H
CM15TF-24H is a high-power N-channel IGBT module rated for 1.2KV and 15A
在庫:5,752
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : CM15TF-24H
-
パッケージ/ケース : Module
-
Brand : Powerex Inc.
-
Components Classification : IGBT Modules
-
日付シート : CM15TF-24H データシート (PDF)
概要 CM15TF-24H
Not only is the CM15TF-24H reliable and efficient, but it is also designed to withstand harsh environments. With a wide operating temperature range and high resistance to vibration and shock, this power module is built to last. Its RoHS compliance means that it is environmentally friendly, making it a sustainable choice for your power needs
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Series | IGBTMOD™ | Package | Bulk |
Product Status | Obsolete | Configuration | Three Phase Inverter |
Voltage - Collector Emitter Breakdown (Max) | 1200 V | Current - Collector (Ic) (Max) | 15 A |
Power - Max | 150 W | Vce(on) (Max) @ Vge, Ic | 3.4V @ 15V, 15A |
Current - Collector Cutoff (Max) | 1 mA | Input Capacitance (Cies) @ Vce | 3 nF @ 10 V |
Input | Standard | NTC Thermistor | No |
Operating Temperature | -40°C ~ 150°C (TJ) | Mounting Type | Chassis Mount |
Package / Case | Module | Supplier Device Package | Module |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![CM800DZ-34H](/files/uploads/product/s/70fea8f8a3ec4de29b0a33c2ccdbb4e0.webp)
CM800DZ-34H
800A Insulated Gate Bipolar Transistor with a 1700V Breakdown Voltage, N-Channel Configuration, and MODULE-10 Form Factor
![BCM857DS,135](/img/package/sc70.jpg)
BCM857DS,135
Trans GP BJT PNP 45V 0.1A 380mW Automotive AEC-Q101 6-Pin TSOP T/R
![BCM857BS,115](/img/package/sc70.jpg)
BCM857BS,115
5V 100mA 2PCSPNP SOT-363
![CM1200HC-66H](/img/package/module.jpg)
CM1200HC-66H
3300V Voltage Breakdown N-Channel IGBT
![CM600E2Y-34H](/img/package/module.jpg)
CM600E2Y-34H
IGBT Modules for High Voltage Chopper Application
![BCM847BS,115](/img/package/sc70.jpg)
BCM847BS,115
Trans GP BJT NPN 45V 0.1A 300mW Automotive AEC-Q101 6-Pin TSSOP T/R
![FCMT080N65S3](/img/package/tdfn6.jpg)
FCMT080N65S3
Power MOSFET, N-Channel, SUPERFET III, Easy-Drive 650 V, 38 A, 80 mOhm
![PMCM4401UNEZ](/img/package/wlcsp4.jpg)
PMCM4401UNEZ
Trans MOSFET N-CH 20V 4.2A 4-Pin WLCSP T/R
![CM400HA-28H](/img/package/module.jpg)
CM400HA-28H
N-channel IGBT Module rated at 1.4KV and 400A, designated as CM400HA-28H
![CM2400HCB-34N](/img/package/module.jpg)
CM2400HCB-34N
Insulated Gate Bipolar Transistor, 2400A Collector Current, 1700V Breakdown Voltage, N-Channel, MODULE-9
![MPSA92G](/img/package/to92.jpg)
MPSA92G
Transistor MPSA92G: PNP type, designed for small signal applications, housed in TO-92 (TO-226) packaging with a body height of 5
![BSC035N04LSGATMA1](/img/package/son8.jpg)
BSC035N04LSGATMA1
TDSON EP style for enhanced performance
![IRFP250MPBF](/img/package/to247.jpg)
IRFP250MPBF
Silicon N-channel MOSFET with 200V voltage and 30A current in TO-247AC casing
![ATF-58143-TR1G](/img/package/sot343.jpg)
ATF-58143-TR1G
ATF-58143-TR1G FET RF 5V 2GHZ
![NTMS7N03R2G](/img/package/soic8.jpg)
NTMS7N03R2G
Lead-free N-channel MOSFET with a small signal, suitable for applications requiring a 4800mA, 30V rating
![MJD340T4G](/img/package/dpak.jpg)
MJD340T4G
ON Semiconductor presents the MJD340T4G, a high-voltage NPN bipolar transistor packaged in a 3-pin DPAK
![NSS40201LT1G](/img/package/sot233.jpg)
NSS40201LT1G
Low VCE(sat) Transistor, NPN, 40 V, 2.0 A
![IRGPH40F](/img/package/to247.jpg)
IRGPH40F
High durability IGBT chip component
![D44C9](/img/package/to220.jpg)
D44C9
Robust design for high-reliability audio amplifiers and motor drives
![STD826T4](/img/package/dpak.jpg)
STD826T4
STD826T4 - Bipolar Junction Transistor (BJT) PNP, 30V 3A 15000mW, DPAK Package, Tape and Reel