BSC035N04LSGATMA1

The BSC035N04LSGATMA1 MOSFET is a high-quality N-channel transistor designed for power-sensitive applications. Featuring a drain source voltage of 40V and an on-resistance of 2.9mohm, this MOSFET offers efficient power management with minimal losses. With a maximum current rating of 100A and a power dissipation of 69W, it can handle high power loads with ease. The PG-TSDSON package style ensures easy assembly and secure mounting, making it suitable for various industrial applications. Operating within a wide temperature range of -55°C to +150°C, this MOSFET is reliable and stable in harsh environments. The 8-pin configuration provides flexibility in circuit layout and enhances overall performance. In summary, the BSC035N04LSGATMA1 MOSFET is a reliable choice for demanding power electronics designs

主な特長

• High-precision timing and synchronization
• Superior signal-to-noise ratio performance
• Rapid shutdown times enabled
• Precision voltage tracking and regulation
• Efficient power consumption optimization
• Sophisticated error detection and correction

応用

• Electric power systems
• Battery control units
• Industrial controls