CM600DXL-24S
High-power IGBT Semiconductor
在庫：6,464
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : CM600DXL-24S
-
パッケージ/ケース : Module
-
Brand : Mitsubishi Materials U.S.A. Corporation
-
Components Classification : IGBT Modules
-
日付シート : CM600DXL-24S データシート (PDF)
概要 CM600DXL-24S
If efficiency and low switching losses are your priorities, the CM600DXL-24S is the perfect fit. Its maximum switching frequency of 20kHz ensures high efficiency while minimizing heat generation. The compact and rugged construction of the module, coupled with its high power density, enables easy installation and long-term reliability in challenging operating conditions. In addition, the built-in temperature sensor and overcurrent protection safeguard the module from overheating and damage, making it a durable and dependable choice for critical systems
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Category | IGBT Modules | RoHS | Details |
| Brand | Mitsubishi Electric | Product Type | IGBT Modules |
| Factory Pack Quantity | 10 | Subcategory | IGBTs |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
CM800DZ-34H
800A Insulated Gate Bipolar Transistor with a 1700V Breakdown Voltage, N-Channel Configuration, and MODULE-10 Form Factor
BCM857DS,135
Trans GP BJT PNP 45V 0.1A 380mW Automotive AEC-Q101 6-Pin TSOP T/R
BCM857BS,115
5V 100mA 2PCSPNP SOT-363
CM1200HC-66H
3300V Voltage Breakdown N-Channel IGBT
CM600E2Y-34H
IGBT Modules for High Voltage Chopper Application
BCM847BS,115
Trans GP BJT NPN 45V 0.1A 300mW Automotive AEC-Q101 6-Pin TSSOP T/R
FCMT080N65S3
Power MOSFET, N-Channel, SUPERFET III, Easy-Drive 650 V, 38 A, 80 mOhm
PMCM4401UNEZ
Trans MOSFET N-CH 20V 4.2A 4-Pin WLCSP T/R
CM400HA-28H
N-channel IGBT Module rated at 1.4KV and 400A, designated as CM400HA-28H
CM2400HCB-34N
Insulated Gate Bipolar Transistor, 2400A Collector Current, 1700V Breakdown Voltage, N-Channel, MODULE-9
IRFH5250TR2PBF
MOSFET with a low on-state resistance of 1.15mOhm
SI7386DP-T1-E3
Low on-resistance of 7mΩ at 10V for efficient operation
IRFR3410PBF
Transistor MOSFET N-channel with 100V and 31A in a 3-pin DPAK package
IRF7910
Suitable for a variety of electronic applications requiring high power switching
DTA043EEBTL
The description for DTA043EEBTL indicates it is a component rated at -0.1A and housed in an SOT-416FL casing
IXBF32N300
IXBF32N300 - High Voltage IGBT Transistors
CM200DX-24S
N-Channel 1200V
APT50GN120L2DQ2G
Power Semiconductor Device for High Power Applications
SI3443DDV-T1-GE3
Trans MOSFET P-CH 20V 4A 6-Pin TSOP T/R
2N2919
Operating at 5V with a maximum current of 30mA, the 2N2919 transistor is RoHS compliant