CM600HU-24F
4-Pin N-Channel 1200V 600A 1900W Transistor Module
在庫：9,766
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : CM600HU-24F
-
パッケージ/ケース : Module
-
Brand : Powerex Inc.
-
Components Classification : IGBT Modules
-
日付シート : CM600HU-24F データシート (PDF)
概要 CM600HU-24F
The CM600HU-24F from Mitsubishi Electric is a top-of-the-line IGBT module that packs a powerful punch in a compact and efficient package. With a voltage rating of 1200 volts and a current rating of 600 amperes, this module is perfect for high-power applications that require reliable performance. Its dual-module configuration and integrated diode work together to deliver enhanced efficiency and power output, making it a standout choice for inverters, converters, and motor control systems
主な特長
- Fast Switching Speed
- High Current Capability
- Efficient Power Conversion
- Safe and Reliable Operation
応用
- Renewable energy
- Power solutions
- Smart grid
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Series | IGBTMOD™ | Packaging | Bulk |
| Part Status | Discontinued | IGBT Type | Trench |
| Configuration | Single | Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector (Ic) (Max) | 600 A | Power - Max | 2400 W |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 600A | Current - Collector Cutoff (Max) | 2 mA |
| Input Capacitance (Cies) @ Vce | 230 nF @ 10 V | Input | Standard |
| NTC Thermistor | No | Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount | Package / Case | Module |
| Supplier Device Package | Module |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
CM800DZ-34H
800A Insulated Gate Bipolar Transistor with a 1700V Breakdown Voltage, N-Channel Configuration, and MODULE-10 Form Factor
BCM857DS,135
Trans GP BJT PNP 45V 0.1A 380mW Automotive AEC-Q101 6-Pin TSOP T/R
BCM857BS,115
5V 100mA 2PCSPNP SOT-363
CM1200HC-66H
3300V Voltage Breakdown N-Channel IGBT
CM600E2Y-34H
IGBT Modules for High Voltage Chopper Application
BCM847BS,115
Trans GP BJT NPN 45V 0.1A 300mW Automotive AEC-Q101 6-Pin TSSOP T/R
FCMT080N65S3
Power MOSFET, N-Channel, SUPERFET III, Easy-Drive 650 V, 38 A, 80 mOhm
PMCM4401UNEZ
Trans MOSFET N-CH 20V 4.2A 4-Pin WLCSP T/R
CM400HA-28H
N-channel IGBT Module rated at 1.4KV and 400A, designated as CM400HA-28H
CM2400HCB-34N
Insulated Gate Bipolar Transistor, 2400A Collector Current, 1700V Breakdown Voltage, N-Channel, MODULE-9
MJF18004G
With a TO220FP package
MJ15020
TO-204 (TO-3) MJ15020 Transistor
SIR426DP-T1-GE3
26DP-T1-GE3, MOSFET, N, 40V, 30A, PPAK SO8:
APT38F80B2
This MOSFET has a low on-resistance of 240mΩ at 20A and 10V gate-source voltage
SI4840BDY-T1-E3
SOIC-8 Surface Mount Power Mosfet with 9 mOhm resistance at 40 V
SISH101DN-T1-GE3
Power MOSFET capable of handling -30V Vds and +/-25V Vgs in PowerPAK 1212-8SH package
ATF-50189-BLK
1 A Current Rating
KSA928AYTA
Product KSA928AYTA is a Transistor with a PNP Bipolar Junction
IXFN44N60
A high-power N-Channel Silicon MOSFET designated IXFN44N60, capable of handling 44A Drain Current at 600V Voltage, featuring low On-Resistance of 0
IXGK60N60C2D1
High-frequency IGBT with fast diode 60A 600V in TO264 package