CSD16570Q5BT
MOSFET 25V NCH NexFET Pwr MOSFET
在庫：5,251
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : CSD16570Q5BT
-
パッケージ/ケース : VSONCLIP-8
-
ブランド : Texas Instruments
-
コンポーネントの分類 : Single FETs, MOSFETs
-
日付シート : CSD16570Q5BT データシート (PDF)
-
Series : CSD16570Q5
概要 CSD16570Q5BT
Elevate your ORing and hot swap applications with the CSD16570Q5BT power MOSFET. Boasting a resistance of just 0.49 mΩ at 25 V, this innovative component in a compact SON 5 × 6 mm package offers superior efficiency and reliability. It is important to emphasize that while this MOSFET excels in minimizing resistance for specific applications, it is not suitable for switching functions
主な特長
- High-Temperature Stability
- Low-Inrush Current Performance
- Silicon-Controlled Rectifier Design
- Pulse-Width Modulation Capability
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| VDS (V) | 25 | Configuration | Single |
| Rds(on) at VGS=4.5 V (max) (mΩ) | 0.82 | Rds(on) at VGS=10 V (max) (mΩ) | 0.59 |
| IDM - pulsed drain current (max) (A) | 400 | QG (typ) (nC) | 95 |
| QGD (typ) (nC) | 31 | QGS (typ) (nC) | 29 |
| VGS (V) | 20 | VGSTH typ (typ) (V) | 1.5 |
| ID - silicon limited at TC=25°C (A) | 456 | ID - package limited (A) | 100 |
| Logic level | Yes | Operating temperature range (°C) | -55 to 150 |
| Rating | Catalog |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
CSD17570Q5B
CSD17570Q5B is a N-channel NexFET MOSFET with a voltage rating of 30V
ACS110-7SN
Product ACS110-7SN: Triacs rated at 1A and 700V for AC Line Switching
CSD16415Q5
High-current 10V 1.9V@250uA null MOSFET
CSD17382F4
Ultra-reliable and highly efficient switching soluti
CSD19534Q5A
Reliable and efficient power control for demanding systems
CSD75211W1723
P-Channel 20V 4.5A 12-Pin Wafer Trans MOSFET
CSD17573Q5B
VSON-CLIP EP package containing a high-power N-channel MOSFET transistor with 8 pins
ACS108-6SA
TO-92 package containing a 600V TRIAC with 0.8A RMS
ACS108-6SN-TR
TRIAC 600V 0.8A(RMS) 13.7A 4-Pin(3+Tab) SOT-223 T/R
ACST310-8BTR
800V DPAK TRIACs (ACST310-8BTR): Designed to operate at currents of 20mA or 10mA, conforming to ROHS regulations
DMG2305UXQ-7
MOSFET MOSFET BVDSS
NVTR01P02LT1G
With a gate threshold voltage of 1.25V and a typical leakage current of 250uA, NVTR01P02LT1G is suitable for low-power applications
SQ2360EES-T1-GE3
SQ2360EES-T1-GE3 from Vishay: An N-channel MOSFET transistor rated for currents up to 4
MMBTA42-TP
NPN Silicon High Voltage Transistor
MJD350T4G
Transistor General Purpose Bipolar Junction PNP 300V 0.5A 1560mW 3-Pin(2+Tab) DPAK Tape and Reel
IRF7842TRPBF
18 A, 40 V HEXFET
TIC246N
TO-220 package triac for controlling high power applications
IRF3205ZPBF
Tube Packaging of N-Channel Silicon MOSFET with 55V Voltage Rating and 110A Current Rating
MJF18008G
MJF18008G Bipolar Transistors
IRF7331PBF
The IRF7331PBF from Infineon boasts a dual N-channel MOSFET design capable of handling currents up to 7 amps and voltages of 20 volts