NVTR01P02LT1G
With a gate threshold voltage of 1.25V and a typical leakage current of 250uA, NVTR01P02LT1G is suitable for low-power applications
在庫：9,912
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : NVTR01P02LT1G
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パッケージ/ケース : SOT23-3
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ブランド : Onsemi
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コンポーネントの分類 : Single FETs, MOSFETs
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日付シート : NVTR01P02LT1G データシート (PDF)
概要 NVTR01P02LT1G
The NVTR01P02LT1G MOSFET is a high-quality, automotive-grade transistor designed for robust and reliable performance in demanding applications. With a P-channel polarity and a maximum drain source voltage of -20V, this MOSFET is capable of handling a continuous drain current of -1.3A. The on-resistance of 0.14 ohm and threshold voltage of -1V ensure efficient operation, while the power dissipation of 400mW allows for effective heat dissipation. The SOT-23 case style with 3 pins offers easy integration into existing circuitry, making it a versatile choice for various automotive electronics
主な特長
- Fast Response Time for Quick Recovery
- High Current Handling Capacity
- AEC-Q100 Qualified for Automotive Use
- Precise Temperature Control
応用
- Smart power management features
- Quick charging capability
- Seamless power transitions
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Status | Active | Compliance | PbAHP |
| Package Type | SOT-23-3 | Case Outline | 318-08 |
| MSL Type | 1 | MSL Temp (°C) | 260 |
| Container Type | REEL | Container Qty. | 3000 |
| ON Target | Y | Channel Polarity | P-Channel |
| Configuration | Single | V(BR)DSS Min (V) | -20 |
| VGS Max (V) | 12 | VGS(th) Max (V) | -1.25 |
| ID Max (A) | 1.3 | PD Max (W) | 0.4 |
| RDS(on) Max @ VGS = 2.5 V (mΩ) | 350 | RDS(on) Max @ VGS = 4.5 V (mΩ) | 220 |
| Qg Typ @ VGS = 10 V (nC) | 3.1 | Ciss Typ (pF) | 225 |
| Pricing ($/Unit) | $0.1022 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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