• CSD18534Q5A SON8
CSD18534Q5A SON8

CSD18534Q5A

channel metal-oxide semiconductor field-effect transistor

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概要 CSD18534Q5A

The CSD18534Q5A Mosfet from Texas Instruments offers superior performance and reliability for a wide range of applications. With a continuous drain current of 50A and a drain source voltage of 60V, this N-Channel transistor is capable of handling high power loads with ease. The low on resistance of 0.0078Ohm ensures efficient power transfer and minimal heat generation, making it ideal for high power density designs. Plus, with a threshold voltage of 1.9V and a power dissipation rating that is RoHS compliant, this Mosfet meets all necessary industry standards for environmental friendliness

CSD18534Q5A

主な特長

  • Ultra-low Qg and Qgd
  • Low thermal resistance
  • Avalanche rated
  • Halogen-free
  • Plastic package
  • Logic level
  • -55 to 150°C Operating junction temperature range

応用

  • Power Management
  • Motor Drive & Control
  • Industrial

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style SMD/SMT Package / Case VSONP-8
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 60 V Id - Continuous Drain Current 100 A
Rds On - Drain-Source Resistance 9.8 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 1.9 V Qg - Gate Charge 17 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 3.1 W Channel Mode Enhancement
Tradename NexFET Series CSD18534Q5A
Brand Texas Instruments Configuration Single
Fall Time 2 ns Forward Transconductance - Min 122 S
Height 1 mm Length 6 mm
Product Type MOSFET Rise Time 5.5 ns
Factory Pack Quantity 2500 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 15 ns
Typical Turn-On Delay Time 5.2 ns Width 4.9 mm
Unit Weight 0.013404 oz

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    部品の品質保証: 365 日

    返品・返金：90日以内

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