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MTD20N03HDL

MOSFET Transistor, N-Channel, TO-252AA

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概要 MTD20N03HDL

HDTMOS E-FET™ Power Field Effect TransistorDPAK for Surface MountN-Channel Enhancement-Mode Silicon GateThis advanced high–cell density HDTMOS E–FET is designed to with stand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low–voltage, high–speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits, and inductive loads. The avalanche energy capability is specified to eliminate the guess work in designs where inductive loads are switched, and to offer additional safety margin against unexpected voltage transients.• Avalanche Energy Specified• Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode• Diode is Characterized for Use in Bridge Circuits• IDSSand VDS(on)Specified at Elevated Temperature• Surface Mount Package Available in 16 mm, 13–inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number• Available in Insertion Mount, Add –1 or 1 to Part Number

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Package / Case TO-252-3
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 30 V Id - Continuous Drain Current 20 A
Rds On - Drain-Source Resistance 40 mOhms Vgs - Gate-Source Voltage - 15 V, + 15 V
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 74 W Channel Mode Enhancement
Brand onsemi Configuration Single
Fall Time 84 ns Forward Transconductance - Min 13 S
Height 2.38 mm Length 6.73 mm
Product Type MOSFET Rise Time 212 ns
Subcategory MOSFETs Transistor Type 1 N-Channel
Type MOSFET Typical Turn-Off Delay Time 23 ns
Typical Turn-On Delay Time 13 ns Width 6.22 mm
Unit Weight 0.011640 oz

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    部品の品質保証: 365 日

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