DMC1030UFDBQ-7
effect transistor for small signals
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部品番号 : DMC1030UFDBQ-7
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パッケージ/ケース : DFN2020-6
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ブランド : DIODES
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コンポーネントの分類 : FET, MOSFET Arrays
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日付シート : DMC1030UFDBQ-7 データシート (PDF)
概要 DMC1030UFDBQ-7
Mosfet Array 12V 5.1A 1.36W Surface Mount U-DFN2020-6 (Type B)
主な特長
- Thermally Efficient Package-Cooler Running Applications High Conversion Efficiency Low RDS(ON) – Minimizes On State Losses Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability
応用
SWITCHING![Diodes Incorporated Inventory Diodes Incorporated Inventory](/files/uploads/inventory/diodes/diodes.jpg)
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | DFN-2020-6 | Transistor Polarity | N-Channel, P-Channel |
Number of Channels | 2 Channel | Vds - Drain-Source Breakdown Voltage | 12 V |
Id - Continuous Drain Current | 5.1 A, 3.9 A | Rds On - Drain-Source Resistance | 17 mOhms, 37 mOhms |
Vgs - Gate-Source Voltage | - 8 V, + 8 V | Vgs th - Gate-Source Threshold Voltage | 400 mV, 1 V |
Qg - Gate Charge | 23.1 nC, 20.8 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 1.36 W |
Channel Mode | Enhancement | Qualification | AEC-Q101 |
Brand | Diodes Incorporated | Configuration | Dual |
Fall Time | 4.9 ns, 25.4 ns | Product Type | MOSFET |
Rise Time | 7.4 ns, 12.8 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel, 1 P-Channel |
Typical Turn-Off Delay Time | 18.8 ns, 30.7 ns | Typical Turn-On Delay Time | 4.4 ns, 5.6 ns |
Unit Weight | 0.000282 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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