HGTG20N50C1D
Chip for N-channel Insulated Gate Transistor (IGBT), Rated at 500 Volts and 26 Amperes, TO-247 Package
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $20.284 | $20.28 |
| 200 | $7.850 | $1,570.00 |
| 500 | $7.574 | $3,787.00 |
| 1000 | $7.438 | $7,438.00 |
在庫：6,117
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : HGTG20N50C1D
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パッケージ/ケース : TO-247-3
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Brand : Harris Corporation
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Components Classification : Single IGBTs
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日付シート : HGTG20N50C1D データシート (PDF)
概要 HGTG20N50C1D
The HGTG20N50C1D is a cutting-edge Power MOSFET that excels in high-performance and energy-efficient power electronics applications. With a Vds voltage rating of 500V and a continuous drain current (Id) of 20A, this MOSFET is versatile and can handle a wide spectrum of high-power and high-frequency switching tasks. Its low on-resistance (Rds(on)) of 0.34 ohms plays a pivotal role in reducing power losses and enhancing efficiency in power conversion systems. Moreover, its high diode reverse recovery time enables rapid switching speeds and diminished switching losses, paving the way for seamless operation in demanding applications
主な特長
- Wide operating range
- Fault-tolerant design
- High-reliability applications
応用
- Power amplifiers
- Motor controllers
- Home appliances
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Packaging | Bulk | Part Status | Active |
| Voltage - Collector Emitter Breakdown (Max) | 500 V | Current - Collector (Ic) (Max) | 26 A |
| Current - Collector Pulsed (Icm) | 35 A | Vce(on) (Max) @ Vge, Ic | 3.2V @ 20V, 35A |
| Power - Max | 75 W | Input Type | Standard |
| Gate Charge | 33 nC | Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Package / Case | TO-247-3 |
| Supplier Device Package | TO-247 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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