DRA9114E0L
The transistor has a resistance of 10 kΩ and a ratio of 1
在庫:7,290
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : DRA9114E0L
-
パッケージ/ケース : SC-89
-
Brand : Panasonic Electronic Components
-
Components Classification : Single, Pre-Biased Bipolar Transistors
-
日付シート : DRA9114E0L データシート (PDF)
概要 DRA9114E0L
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 125 mW Surface Mount SSMini3-F3-B
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Status | Discontinued at Digi-Key | Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100 mA | Voltage - Collector Emitter Breakdown (Max) | 50 V |
Resistor - Base (R1) | 10 kOhms | Resistor - Emitter Base (R2) | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 10V | Vce Saturation (Max) @ Ib, Ic | 250mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 500nA | Power - Max | 125 mW |
Mounting Type | Surface Mount | Package / Case | SC-89, SOT-490 |
Supplier Device Package | SSMini3-F3-B | Base Product Number | DRA9114 |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![SIDR170DP-T1-RE3](/img/package/power33.jpg)
SIDR170DP-T1-RE3
N-Channel 100 V 23.2A (Ta), 95A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC
![MMSF3P02HDR2G](/img/package/soic8.jpg)
MMSF3P02HDR2G
-20V -5.6A Power MOSFET with P-Channel design, 75 mOhm resistance, and compact SO-8 package
![MC1413DR2G](/img/package/soic16.jpg)
MC1413DR2G
MC1413DR2G is a high-voltage, high-speed power switching transistor commonly used in power supply applications.
![NSS40302PDR2G](/img/package/so5.jpg)
NSS40302PDR2G
Trans GP BJT NPN/PNP 40V 3A 783mW 8-Pin SOIC N T/R
![NCV1413BDR2G](/img/package/soic16.jpg)
NCV1413BDR2G
NCV1413BDR2G: AEC-Q101 compliant transistor designed for automotive applications, offering reliable operation and high performance
![FDR8308P](/img/package/tsop.jpg)
FDR8308P
8-Pin Power MOSFET with P-Channel Technology
![FDR858P](/img/package/so5.jpg)
FDR858P
-30V P-channel MOSFET SSOT-8
![FDR8305N](/img/package/ssot8.jpg)
FDR8305N
N-CH Dual 20V MOSFET in SSOT-8 Package
![DRC2114E0L](/img/package/sot23.jpg)
DRC2114E0L
DRC2114E0L Digital NPN Transistor, 100 MA, 50 V, 10 kΩ, 3-Pin Mini3 G3 B
![DRC5114E0L](/img/package/sc70.jpg)
DRC5114E0L
HALOGEN FREE AND ROHS COMPLIANT
![AUIRLS3036-7P](/img/package/to263.jpg)
AUIRLS3036-7P
This MOSFET, designated AUIRLS3036-7P, is engineered for automotive electronics, ensuring reliability under harsh conditions
![IXYN100N120C3H1](/img/package/sot.jpg)
IXYN100N120C3H1
High Power N-Channel IGBT Chip with 1200V 140A Rating
![SI4431BDY-T1-E3](/img/package/soic8.jpg)
SI4431BDY-T1-E3
SI4431BDY-T1-E3
![PMV27UPER](/img/package/sot23.jpg)
PMV27UPER
Trans MOSFET P-CH 20V 4.5A 3-Pin SOT-23 T/R
![IRF9335PBF](/img/package/soic8.jpg)
IRF9335PBF
SO-8 package P Channel MOSFET with 5.4A current rating
![MPSA92G](/img/package/to92.jpg)
MPSA92G
Transistor MPSA92G: PNP type, designed for small signal applications, housed in TO-92 (TO-226) packaging with a body height of 5
![SI7465DP-T1-E3](/img/package/power33.jpg)
SI7465DP-T1-E3
SI7465DP-T1-E3 is a power MOSFET device with P-channel enhancement, specified for a voltage range of 60V and a maximum current of 3
![NTMD3P03R2G](/img/package/soic8.jpg)
NTMD3P03R2G
Dual P−Channel SOIC−8 Power MOSFET capable of handling 3.05 Amps and operating at -30 Volts
![SI1967DH-T1-GE3](/img/package/sot23.jpg)
SI1967DH-T1-GE3
MOSFET with -20V maximum drain-source voltage and 8V gate-source voltage in SC70-6 package
![SI6562CDQ-T1-GE3](/img/package/tssop8.jpg)
SI6562CDQ-T1-GE3
Trans MOSFET with 20V voltage rating and 5.7A/5.1A current rating, in an 8-pin TSSOP package on tape and reel