DTA014YEBTL
80@5mA,10V One PNP - Pre-Biased 150mW 70mA 50V SOT-416FL Digital Transistors ROHS
数量 | 単価(USD) | 合計金額 |
---|---|---|
10 | $0.030 | $0.30 |
100 | $0.026 | $2.60 |
300 | $0.025 | $7.50 |
3000 | $0.022 | $66.00 |
6000 | $0.021 | $126.00 |
9000 | $0.021 | $189.00 |
在庫:9,779
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : DTA014YEBTL
-
パッケージ/ケース : SC-89
-
Brand : Rohm Semiconductor
-
Components Classification : Single, Pre-Biased Bipolar Transistors
-
日付シート : DTA014YEBTL データシート (PDF)
-
Series : DTA014YEB
概要 DTA014YEBTL
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 70 mA 250 MHz 150 mW Surface Mount EMT3F (SOT-416FL)
主な特長
1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. (See Equivalent circuit)
2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making the device design easy.
応用
Inverter, Interface, Driver
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Status | Active | Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 70 mA | Voltage - Collector Emitter Breakdown (Max) | 50 V |
Resistor - Base (R1) | 10 kOhms | Resistor - Emitter Base (R2) | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V | Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 5mA |
Frequency - Transition | 250 MHz | Power - Max | 150 mW |
Mounting Type | Surface Mount | Package / Case | SC-89, SOT-490 |
Supplier Device Package | EMT3F (SOT-416FL) | Base Product Number | DTA014 |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
DTA114EUAT106
Trans Digital BJT PNP 100mA 3-Pin UMT T/R
DTA123JKAT146
Bipolar Junction Transistor, PNP Type, SC-59 Package, Silicon Material, 0.1A Collector Current, 50V Breakdown Voltage, 3 Pins
DTA143EUAT106
ROHM - DTA143EUAT106 - TRANSISTOR
DTB123EKT146
50V 500mA transistors
DTC043EEBTL
ROHM, DTC043EEBTL NPN Digital Transistor, 100 mA 150 mV 4.7 kΩ, Ratio Of 1, 3-Pin SOT-416FL
DTC114EUAT106
Bipolar transistors pre-biased digital NPN SOT-323 50V 50mA
DTC123JUAT106
Specifications of Product DTC123JUAT106 include '80@10mA
DTC123YKAT146
The DTC123YKAT146 is compliant with ROHS regulations, ensuring environmentally friendly manufacturing processes
DTDG14GPT100
Featuring 300 units at 500 milliamps and a 2-volt output, the DTDG14GPT100 Digital Transistor boasts one NPN - Pre Biased transistor
DTC143XUAT106
Digital Bipolar Junction Transistor NPN 100mA 3-Pin UMT Tape and Reel
SI4447ADY-T1-GE3
MOSFET with P-Channel and 40V Drain-Source Voltage
SI4835DY
SI4835DY - High Current P-Channel MOSFET in Small Signal Si Technology
TIP107G
8A 100V Darlington Transistors for Power Applications
IXFA72N30X3
Advanced N-channel MOSFET with X3 ultra junction configuration
2N6517BU
TO-92 Packaged NPN Transistor for General Purpose Applications, Rated at 350V and 500mA - Bulk
SST2222AT116
3-Pin SST NPN Transistor manufactured by ROHM, model SST2222AT116, with a rated current of 600 mA and a rated voltage of 40 V
AT-41533
AT-41533 Bipolar Transistor for Small Signal RF Amplification
FDD5N50NZTM
500 volts voltage rating
IMZ120R045M1XKSA1
Discrete SiC MOSFET
IXTY26P10T
Low on-resistance power transistor with a maximum drain-source voltage of -100V