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DTC114YUAT106

Small Signal Bipolar Transistor with 0.1A of Collector Current and 50V of Collector-Emitter Breakdown Voltage

数量 単価(USD) 合計金額
20 $0.034 $0.68
200 $0.030 $6.00
600 $0.028 $16.80
3000 $0.027 $81.00
9000 $0.026 $234.00
21000 $0.026 $546.00

在庫：5,484

*価格は参考値です。
  • 90日間のアフター保証
  • 365日の品質保証
  • 正規品保証
  • 7*24時間サービス検疫

迅速な見積もり

見積もりリクエストを送信してください DTC114YUAT106 このフォームを使用してください。また、次の電子メールでご連絡いただくこともできます Email: [email protected], 12時間以内に返信させていただきます。

概要 DTC114YUAT106

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 70 mA 250 MHz 200 mW Surface Mount UMT3

主な特長

  • 1) Built-in bias resistors enable the configuration of an
  • inverter circuit without connecting external input
  • resistors (see equivalent circuit).
  • 2) The bias resistors consist of thin-film resistors with
  • complete isolation to allow negative biasing of the
  • input. They also have the advantage of almost
  • completely eliminating parasitic effects.
  • 3) Only the on/off conditions need to be set for
  • operation, making device design easy.

応用

SWITCHING

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Pbfree Code Yes Rohs Code Yes
Part Life Cycle Code Not Recommended Ihs Manufacturer ROHM CO LTD
Part Package Code SC-70 Package Description SMALL OUTLINE, R-PDSO-G3
Pin Count 3 Reach Compliance Code compliant
ECCN Code EAR99 HTS Code 8541.21.00.75
Samacsys Manufacturer ROHM Semiconductor Additional Feature BUILT IN BIAS RESISTOR RATIO IS 4.7
Collector Current-Max (IC) 0.1 A Collector-Emitter Voltage-Max 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR DC Current Gain-Min (hFE) 68
JESD-30 Code R-PDSO-G3 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 3
Operating Temperature-Max 150 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type NPN
Power Dissipation Ambient-Max 0.2 W Power Dissipation-Max (Abs) 0.2 W
Qualification Status Not Qualified Surface Mount YES
Terminal Form GULL WING Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 10 Transistor Application SWITCHING
Transistor Element Material SILICON Transition Frequency-Nom (fT) 250 MHz
VCEsat-Max 0.3 V

保証と返品

保証、返品、および追加情報

  • QAと返品ポリシー

    部品の品質保証: 365 日

    返品・返金：90日以内

    返品・交換：90日以内

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