F4-150R12KS4
The F4-150R12KS4 from Infineon
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $237.723 | $237.72 |
30 | $228.083 | $6,842.49 |
在庫:7,697
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : F4-150R12KS4
-
パッケージ/ケース : Module
-
Brand : Infineon Technologies
-
Components Classification : IGBT Modules
-
日付シート : F4-150R12KS4 データシート (PDF)
概要 F4-150R12KS4
Powered by cutting-edge IGBT4 technology, it thrives in challenging environments, offering seamless integration and robust protection against overheating with its compact design and built-in temperature sensors
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Package | Bulk | Product Status | Active |
Configuration | Three Phase Inverter | Voltage - Collector Emitter Breakdown (Max) | 1200 V |
Current - Collector (Ic) (Max) | 180 A | Power - Max | 960 W |
Vce(on) (Max) @ Vge, Ic | 3.75V @ 15V, 150A | Current - Collector Cutoff (Max) | 5 mA |
Input Capacitance (Cies) @ Vce | 10 nF @ 25 V | Input | Standard |
NTC Thermistor | Yes | Operating Temperature | -40°C ~ 125°C |
Mounting Type | Chassis Mount | Package / Case | Module |
Supplier Device Package | Module | Base Product Number | F4150R12 |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![AUIRF4905](/img/package/to220.jpg)
AUIRF4905
AUIRF4905 is a P-Channel MOSFET with a current rating of 74A and a voltage rating of 55V
![AUIRF4905STRL](/img/package/d2pak3.jpg)
AUIRF4905STRL
Automotive-Qualified Single P-Channel HEXFET Power MOSFET for -55V operation, housed in a D2-Pak Package compliant with RoHS regulations
![BF423](/img/package/to92.jpg)
BF423
Bipolar Transistors - BJT 500mA 250V PNP
![CSD17382F4](/img/package/dfn.jpg)
CSD17382F4
Ultra-reliable and highly efficient switching soluti
![FQPF4N90C](/img/package/llp.jpg)
FQPF4N90C
N-Channel MOSFET with 900V and 4A Rating, TO-220F Package, ROHS Certified
![IRF4104PBF](/img/package/to220.jpg)
IRF4104PBF
IRF4104PBF is a N Channel MOSFET with a maximum voltage rating of 40V and a maximum current rating of 75A
![MMBF4392](/img/package/sot23.jpg)
MMBF4392
Trans JFET N-CH 3-Pin SOT-23 T/R
![STF42N65M5](/img/package/to-220f.jpg)
STF42N65M5
TO-220FP package Power MOSFET
![F423MR12W1M1B11BOMA1](/img/package/module.jpg)
F423MR12W1M1B11BOMA1
N-Channel Silicon Carbide Power MOSFET 1.2KV 50A 22-Pin Tray
![FF450R12IE4](/img/package/module.jpg)
FF450R12IE4
FF450R12IE4 is a Trans IGBT Module with a voltage rating of 1200V and a current rating of 450A
![DMP6180SK3-13](/files/uploads/product/s/ba3de01889494082936f6072e2bbe244.webp)
DMP6180SK3-13
60V P-channel MOSFET
![ACS108-6SN-TR](/img/package/sot223.jpg)
ACS108-6SN-TR
TRIAC 600V 0.8A(RMS) 13.7A 4-Pin(3+Tab) SOT-223 T/R
![BTB10-600BWRG](/img/package/to220ab.jpg)
BTB10-600BWRG
A 50mA 600V dual SCR TO-220AB TRIACs ROHS, model BTB10-600BWRG, is available
![FP10R12KE3](/img/package/module.jpg)
FP10R12KE3
Advanced Electronic IGBT Component
![IXXK300N60B3](/img/package/to264.jpg)
IXXK300N60B3
IXXK300N60B3 - XPT 600V IGBT 300A Transistors: These transistors feature a voltage rating of 600V and a current rating of 300A
![CPH5524-TL-E](/img/product.png)
CPH5524-TL-E
NPN/PNP Bipolar Junction Transistor for General Purpose Applications
![APT200GN60J](/img/package/sot.jpg)
APT200GN60J
N-type Transistor Insulated Gate Bipolar Junction Transistor (IGBT) Module rated for 600V voltage
![BFG540,215](/img/package/sot143.jpg)
BFG540,215
Trans RF BJT NPN 15V 0.12A 400mW 4-Pin(3+Tab) SOT-143B T/R
![MPF960](/img/package/sot233.jpg)
MPF960
High-power N-channel MOSFET for robust switching applications
![BSS214N H6327](/img/package/sot23.jpg)
BSS214N H6327
Low On-Resistance N-Channel FET BSS214N