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FCP104N60F

Designed for unipolar applications

在庫：9,647

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概要 FCP104N60F

Incorporating advanced technology, the FCP104N60F SuperFET® II MOSFET provides exceptional benefits for various power applications. The charge balance technology utilized in this MOSFET enables it to achieve outstanding low on-resistance and reduced gate charge, thereby enhancing efficiency and performance. Its superior switching capabilities, high dv/dt rate, and increased avalanche energy make it a reliable choice for demanding applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power. Additionally, the optimized body diode reverse recovery performance of the SuperFET® II FRFET® MOSFET further enhances system reliability by eliminating the need for additional components

主な特長

  • Ultra-Low Current Consumption
  • High Efficiency Power Delivery
  • Compact Form Factor Design

応用

  • Cost-effective Solutions
  • Compact Design
  • High Efficiency

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style Through Hole Package / Case TO-220-3
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 600 V Id - Continuous Drain Current 37 A
Rds On - Drain-Source Resistance 104 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 5 V Qg - Gate Charge 145 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 357 W Channel Mode Enhancement
Tradename SuperFET II FRFET Series FCP104N60F
Brand onsemi / Fairchild Configuration Single
Fall Time 21.4 ns Height 16.3 mm
Length 10.67 mm Product Type MOSFET
Rise Time 50 ns Factory Pack Quantity 800
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 214 ns Typical Turn-On Delay Time 78 ns
Width 4.7 mm Unit Weight 0.068784 oz

保証と返品

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  • QAと返品ポリシー

    部品の品質保証: 365 日

    返品・返金：90日以内

    返品・交換：90日以内

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