• FDV302P SOT-23
FDV302P SOT-23

FDV302P

Trans MOSFET P-CH 25V 0.12A 3-Pin SOT-23 T/R

数量 単価(USD) 合計金額
10 $0.035 $0.35
100 $0.028 $2.80
300 $0.024 $7.20
3000 $0.022 $66.00
6000 $0.020 $120.00
9000 $0.019 $171.00

在庫：6,174

*価格は参考値です。
  • 90日間のアフター保証
  • 365日の品質保証
  • 正規品保証
  • 7*24時間サービス検疫

迅速な見積もり

見積もりリクエストを送信してください FDV302P このフォームを使用してください。また、次の電子メールでご連絡いただくこともできます Email: [email protected], 12時間以内に返信させていただきます。

概要 FDV302P

The FDV302P is a P-Channel logic level enhancement mode field effect transistor that utilizes a proprietary high cell density DMOS technology, resulting in minimal on-state resistance and exceptional performance in low voltage applications. Designed as a replacement for digital transistors, the FDV302P eliminates the need for bias resistors, offering a more efficient and simplified solution for electronic circuits. With its advanced manufacturing process and superior design, the FDV302P provides a highly reliable and cost-effective option for a variety of applications

FDV302P

主な特長

  • Advanced thermal management
  • Enhanced durability in harsh environments
  • Compact form factor for space-constrained applications
  • Precise control over gate-source voltage
  • Robust construction against electrical overstress

応用

  • Great for all your needs.
  • Perfect for any situation.
  • A versatile choice for all.

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-23-3 Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 25 V
Id - Continuous Drain Current 120 mA Rds On - Drain-Source Resistance 13 Ohms
Vgs - Gate-Source Voltage - 8 V, + 8 V Vgs th - Gate-Source Threshold Voltage 1.5 V
Qg - Gate Charge 310 pC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 350 mW
Channel Mode Enhancement Series FDV302P
Brand onsemi / Fairchild Configuration Single
Fall Time 8 ns Forward Transconductance - Min 0.135 S
Height 1.2 mm Length 2.9 mm
Product MOSFET Small Signal Product Type MOSFET
Rise Time 8 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 P-Channel
Type MOSFET Typical Turn-Off Delay Time 9 ns
Typical Turn-On Delay Time 5 ns Width 1.3 mm
Part # Aliases FDV302P_NL Unit Weight 0.000282 oz

保証と返品

保証、返品、および追加情報

  • QAと返品ポリシー

    部品の品質保証: 365 日

    返品・返金：90日以内

    返品・交換：90日以内

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    部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。

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