FF150R12YT3
N-Channel MODULE-24 with Insulated Gate Bipolar Transistor
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $105.601 | $105.60 |
200 | $40.867 | $8,173.40 |
500 | $39.430 | $19,715.00 |
1000 | $38.720 | $38,720.00 |
在庫:5,764
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : FF150R12YT3
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パッケージ/ケース : Module
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Brand : Infineon Technologies
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Components Classification : IGBT Modules
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日付シート : FF150R12YT3 データシート (PDF)
概要 FF150R12YT3
One of the key highlights of the FF150R12YT3 module is its three-level Trench/Fieldstop IGBT design, which significantly enhances conduction and switching characteristics. This design feature allows for higher power density and superior thermal performance, enabling more compact and reliable system designs. Additionally, the integrated anti-parallel diode with low reverse recovery time further improves system efficiency by reducing switching losses
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Package | Tray | Product Status | Obsolete |
Configuration | 2 Independent | Voltage - Collector Emitter Breakdown (Max) | 1200 V |
Current - Collector (Ic) (Max) | 200 A | Power - Max | 625 W |
Vce(on) (Max) @ Vge, Ic | 2.15V @ 15V, 150A | Current - Collector Cutoff (Max) | 1 mA |
Input Capacitance (Cies) @ Vce | 10.5 nF @ 25 V | Input | Standard |
NTC Thermistor | Yes | Operating Temperature | -40°C ~ 125°C |
Mounting Type | Chassis Mount | Package / Case | Module |
Supplier Device Package | Module | Base Product Number | FF150R12Y |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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