IXTN210P10T
SOT-227B-packaged P-channel transistor designed for heavy-duty applications up to 100 volts and 210 amps
在庫：9,837
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- 365日の品質保証
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部品番号 : IXTN210P10T
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パッケージ/ケース : SOT227-4
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Brand : IXYS
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Components Classification : Single FETs, MOSFETs
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日付シート : IXTN210P10T データシート (PDF)
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Series : IXTN210P10
概要 IXTN210P10T
The IXTN210P10T Trench P-Channel MOSFET offers an ideal solution for high side switching applications. Its design allows for a straightforward drive circuit referenced to ground, eliminating the need for complex high side driver circuitry commonly associated with N-Channel MOSFETs. This simplicity not only reduces component count but also improves drive circuit efficiency and overall cost-effectiveness. With this MOSFET, designers can streamline their power output stage by pairing it with a corresponding N-Channel MOSFET for a complementary power half bridge stage. This combination not only simplifies the design process but also enhances performance and reliability
主な特長
- Rapid switching speed
- Minimal standby current
- Advanced design concepts
応用
- Sleek design
- Effortless integration
- Flexible voltage options
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Drain-Source Voltage (V) | -100 | Maximum On-Resistance @ 25 ℃ (Ohm) | 0.0075 |
| Continuous Drain Current @ 25 ℃ (A) | -210 | Gate Charge (nC) | 740 |
| Input Capacitance, CISS (pF) | 69500 | Thermal resistance [junction-case] (K/W) | 0.15 |
| Configuration | Single | Package Type | SOT-227 |
| Power Dissipation (W) | 830 | Maximum Reverse Recovery (ns) | 200 |
| Sample Request | No | Check Stock | Yes |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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