FGH40T120SQDNL4
4-Pin TO-247 GBT Transistor
在庫：7,116
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- 365日の品質保証
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部品番号 : FGH40T120SQDNL4
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パッケージ/ケース : TO-247-4
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ブランド : Onsemi
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コンポーネントの分類 : Single IGBTs
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日付シート : FGH40T120SQDNL4 データシート (PDF)
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Series : FGH40T120SQDNL4
概要 FGH40T120SQDNL4
This IGBT is particularly well-suited for UPS and solar applications, where high-efficiency operation is crucial. Furthermore, the device features a soft and fast co-packaged free-wheeling diode with a low forward voltage, ensuring smooth transitions and reduced power consumption
主な特長
- High-Speed, High-Power Switching with Minimal Noise
- Safe, Low-Voltage Operation for Increased Safety
- Low Current Consumption and High Efficiency Operation
- Robust Mechanical Design for Durable Performance
- Fast Recovery Time for Quick Turn-Off Capability
- Operating Temperature Range: -40°C to 175°C with TJmax
応用
- Off-grid solar solution
- Wind turbine integration
- Battery backup system
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Category | IGBT Transistors | RoHS | Details |
| Technology | Si | Package / Case | TO-247-4 |
| Mounting Style | Through Hole | Configuration | Single |
| Collector- Emitter Voltage VCEO Max | 1.2 kV | Collector-Emitter Saturation Voltage | 1.78 V |
| Maximum Gate Emitter Voltage | - 20 V, 20 V | Continuous Collector Current at 25 C | 160 A |
| Pd - Power Dissipation | 454 W | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C | Series | FGH40T120SQDNL4 |
| Brand | onsemi | Gate-Emitter Leakage Current | 200 nA |
| Product Type | IGBT Transistors | Factory Pack Quantity | 450 |
| Subcategory | IGBTs | Unit Weight | 0.324351 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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