FGH40T120SQDNL4
|
4-Pin TO-247 GBT Transistor |
Onsemi |
7,116 |
|
IMZ120R030M1HXKSA1
|
IMZ120R030M1HXKSA1 is RoHS compliant, ensuring environmental friendliness and safety in electronic applications |
Infineon Technologies |
9,328 |
|
LSIC1MO120G0025
|
High-power electronic component with superior performance |
Littelfuse |
6,568 |
|
NTH4L020N120SC1
|
1200-volt, 20-milliohm Silicon Carbide (SiC) MOSFET - EliteSiC, TO-247-4L |
Onsemi |
9,008 |
|
UJ4SC075006K4S
|
JFET 750V/6mO Silicon Carbide Field-Effect Transistor TO-247-4 |
Qorvo |
7,198 |
|
UF3C065040K4S
|
The MOSFET UF3C065040K4S delivers superior performance with its 650V voltage rating |
Qorvo |
7,230 |
|
FGH75T65SHDTL4
|
Product FGH75T65SHDTL4 features Insulated Gate Bipolar Transistor (IGBT) technology |
Onsemi |
9,024 |
|
UF3SC065007K4S
|
Product description: 650V 120A 9mΩ at 50A, 12V 789W 6V at 10mA - MOSFETs ROHS |
Qorvo |
8,915 |
|
NTH4L028N170M1
|
Trans MOSFET N-CH SiC 1.7KV 81A 4-Pin(4+Tab) TO-247 Tube |
onsemi |
7,083 |
|
NVH4L020N120SC1
|
MOSFET SIC MOS TO247-4L 20MOHM 1200V |
onsemi |
8,629 |
|
FGH75T65SQDNL4
|
High Power Field Stop IGBT |
Onsemi |
7,267 |
|
NTH4L080N120SC1
|
Trans MOSFET N-CH SiC 1.2KV 50.4A 4-Pin(4+Tab) TO-247 Tube |
Onsemi |
8,283 |
|
DMWS120H100SM4
|
Silicon Carbide MOSFET with over 1000V BVDSS in TO247-4 packaging, supplied in a tube of 30 units |
Diodes Incorporated |
5,888 |
|
MSC035SMA070B4
|
TO-247-4 package SIC MOSFET with 700V and 35mOhm |
Microchip Technology |
9,136 |
|
MSC025SMA330B4
|
MOSFET with 3300 V rating and 25 mOhm resistance in TO-247-4 package |
Microchip Technology |
9,368 |
|
MSC040SMA120B4
|
1200V Silicon Carbide (SiC) MOSFET |
Microchip Technology |
6,758 |
|
MSC025SMA120B4
|
1200V Silicon Carbide (SiC) MOSFET |
Microchip Technology |
7,083 |
|
MSC080SMA330B4
|
TO-247 4-Pin N-Channel MOSFET Transistor 3300V 41A Tube |
Microchip Technology |
6,415 |
|
MSC015SMA070B4
|
Product MSC015SMA070B4, a Silicon Carbide N-Channel Power MOSFET |
Microchip Technology |
8,725 |
|
MSC035SMA170B4
|
Trans MOSFET N-CH SiC 1.7KV 68A 4-Pin(4+Tab) TO-247 |
Microchip |
8,219 |
|
E3M0032120K
|
Automotive MOSFET SiC Gen 3 TO-247-4 1200V 32mohm |
Wolfspeed, Inc |
6,248 |
|
G3R20MT17K
|
Power Field-Effect Transistor G3R20MT17K |
GeneSiC Semiconductor |
8,065 |
|
E3M0060065K
|
Silicon Carbide MOSFET rated at 650 volts |
Wolfspeed, Inc. |
7,899 |
|
E3M0075120K
|
Null threshold voltage with 3.6V at 5mA |
Wolfspeed, Inc. |
7,475 |
|
UF3C120080K4S
|
Silicon Carbide FET: UF3C120080K4S, 1200V, 80mΩ |
Qorvo |
5,356 |
|
C3M0120065K
|
Trans MOSFET N-CH Silicon Carbide 650V 22A 4-Pin TO-247 |
Wolfspeed, Inc. |
5,958 |
|
SCT3060ARC14
|
Silicon Carbide FET |
Rohm Semiconductor |
7,498 |
|
C3M0045065K
|
Trans MOSFET N-Channel Silicon Carbide 650V 49A TO-247 Package |
Wolfspeed, Inc. |
5,775 |
|
UF3C120150K4S
|
Maximum voltage of 1.2KV |
Qorvo |
9,022 |
|
E3M0021120K
|
TO-247-4 MOSFET SiC Gen 3 Automotive 1200V 21mohm |
Wolfspeed, Inc. |
9,380 |
|
E3M0040120K
|
AEC-Q101 compliant N-channel SiC MOSFET engineered for automotive applications, supporting voltages up to 1 |
Wolfspeed, Inc. |
5,274 |
|
UJ4SC075011K4S
|
High-Current MOSFET |
Qorvo |
5,297 |
|
G3R30MT12K
|
The G3R30MT12K is a Silicon Carbide MOSFET capable of handling 1200V with an on-resistance of 30 milliohms, presented in a TO-247-4 package |
GeneSiC Semiconductor |
9,175 |
|
G3R75MT12K
|
G3R75MT12K is a MOSFET component capable of handling up to 1 |
GeneSiC Semiconductor |
7,812 |
|
C2M0045170P
|
Bulk packaging of 4-pin (4+tab) TO-247 silicon carbide N-channel MOSFET with 1.7KV voltage rating |
Wolfspeed, Inc. |
7,462 |
|
G3R12MT12K
|
Transistor Optimized for Power Fields |
GeneSiC Semiconductor |
5,029 |
|
UF3C065030K4S
|
SiC FET with a rating of 650 volts and a resistance of 27 milliohms |
Qorvo |
7,199 |
|
UJ4C075033K4S
|
TO247-4 packaged JFET with G4 configuration |
Qorvo |
7,531 |
|
SCT3030ARC14
|
TO-247 Packaged N-Channel MOSFET, 650V, 70A, Tube/Rail Compatible |
Rohm Semiconductor |
9,082 |
|
IMZA65R027M1H
|
Tube packaging containing a 4-pin TO-247 N-channel SiC MOSFET rated at 650V and 59A |
Infineon Technologies |
7,911 |
|
C3M0120100K
|
Silicon carbide MOSFET with 120mOhm resistance and 1000V voltage rating in TO-247-4 package |
Wolfspeed, Inc. |
7,742 |
|
IKZ75N65EL5
|
IGBTs TO-247-4 compliant with ROHS |
infineon |
8,997 |
|
IMZ120R060M1H
|
Effect Transistor |
infineon |
6,614 |
|
IKZ75N65EH5
|
Transistor IGBT Chip for High-Power Applications, N-Type, 650V, 90A |
infineon |
7,406 |
|
STC04IE170HP
|
4-Pin (4+Tab) TO-247 Tube Emitter Switched Bipolar Transistor |
STMicroelectronics |
7,108 |
|
SCT4026DRHRC15
|
Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistor |
Rohm Semiconductor |
5,780 |
|
IGZ100N65H5
|
Transistors IGZ100N65H5 |
Infineon Technologies |
5,736 |
|
IMZ120R045M1
|
1200V SiC Trench MOSFET Silicon Carbide MOSFET |
infineon |
8,129 |
|
UJ4C075060K4S
|
750V-58mΩ SiC FET |
Qorvo |
9,143 |
|
G2R50MT33K
|
MOSFET 3300V 50mOhmTO-247-4 SiC MOSFET |
GeneSiC Semiconductor |
6,143 |
|